參數(shù)資料
型號(hào)： CY7C1339G-200AXCT
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 128K X 32 CACHE SRAM, 2.8 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
文件頁(yè)數(shù)： 15/18頁(yè)
文件大?。?/td> 386K
代理商： CY7C1339G-200AXCT
CY7C1339G
Document #: 38-05520 Rev. *F
Page 6 of 18
Truth Table [2, 3, 4, 5, 6, 7]
Operation
Add. Used
CE1 CE2 CE3 ZZ ADSP
ADSC
ADV
WRITE
OE CLK
DQ
Deselect Cycle, Power-down
None
H
X
L
X
L
X
L-H
Tri-State
Deselect Cycle, Power-down
None
L
X
L
X
L-H
Tri-State
Deselect Cycle, Power-down
None
L
X
H
L
X
L-H
Tri-State
Deselect Cycle, Power-down
None
L
X
L
H
L
X
L-H
Tri-State
Deselect Cycle, Power-down
None
L
X
H
L
H
L
X
L-H
Tri-State
Snooze Mode, Power-down
None
X
H
X
Tri-State
READ Cycle, Begin Burst
External
L
H
L
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
X
H
L-H
Tri-State
WRITE Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
H
L
X
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
X
L
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
X
L
H
L
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L-H
Tri-State
WRITE Cycle, Continue Burst
Next
X
L
H
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
L
X
H
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
L
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
L
H
L-H
Tri-State
READ Cycle, Suspend Burst
Current
H
X
L
X
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
L
X
H
L-H
Tri-State
WRITE Cycle, Suspend Burst
Current
X
L
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
L
X
H
L
X
L-H
D
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals
(BWA, BWB, BWC, BWD), BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: D]. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
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