參數(shù)資料
型號(hào)： CY7C1512JV18-267BZXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 4M X 18 QDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁(yè)數(shù)： 13/26頁(yè)
文件大?。?/td> 648K
代理商： CY7C1512JV18-267BZXC
CY7C1510JV18, CY7C1525JV18
CY7C1512JV18, CY7C1514JV18
Document #: 001-14435 Rev. *F
Page 20 of 26
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V
Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD
DC Applied to Outputs in High-Z ........ –0.5V to VDDQ + 0.5V
DC Input Voltage [11].............................. –0.5V to VDD + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (TA)
VDD
VDDQ
Commercial
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
Industrial
–40°C to +85°C
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [12]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
I/O Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 16
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 17
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = 0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage
VREF + 0.1
VDDQ + 0.3
V
VIL
Input LOW Voltage
–0.3
VREF – 0.1
V
IX
Input Leakage Current
GND
≤ V
I ≤ VDDQ
5
μA
IOZ
Output Leakage Current
GND
≤ V
I ≤ VDDQ, Output Disabled
5
μA
VREF
Input Reference Voltage [18] Typical Value = 0.75V
0.68
0.75
0.95
V
IDD
VDD Operating Supply
VDD = Max,
IOUT = 0 mA,
f = fMAX = 1/tCYC
267 MHz
(x8)
1375
mA
(x9)
1385
(x18)
1495
(x36)
1710
250 MHz
(x8)
1245
mA
(x9)
1255
(x18)
1365
(x36)
1580
ISB1
Automatic Power down
Current
Max VDD,
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC,
Inputs Static
267 MHz
(x8)
400
mA
(x9)
400
(x18)
420
(x36)
455
250 MHz
(x8)
365
mA
(x9)
365
(x18)
385
(x36)
420
Notes
15. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
16. Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
17. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
18. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.
19. The operation current is calculated with 50% read cycle and 50% write cycle.
相關(guān)PDF資料
PDF描述
CY7C1515AV18-250BZXI 2M X 36 QDR SRAM, 0.45 ns, PBGA165
CY7C1522JV18-250BZI 8M X 8 DDR SRAM, 0.45 ns, PBGA165
CY7C1524KV18-333BZI 2M X 36 DDR SRAM, 0.45 ns, PBGA165
CY7C1612KV18-333BZXC 8M X 18 QDR SRAM, PBGA165
CY7C256-45PC 32K X 8 OTPROM, 45 ns, PDIP28
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1512KV18-200BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb x 18 200 MHz RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-200BZXI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1512KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-250BZCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72MB 2.9V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-250BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*