參數(shù)資料
型號(hào): CY7C1512JV18-267BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 4M X 18 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 3/26頁
文件大?。?/td> 648K
代理商: CY7C1512JV18-267BZXC
CY7C1510JV18, CY7C1525JV18
CY7C1512JV18, CY7C1514JV18
Document #: 001-14435 Rev. *F
Page 11 of 26
Write Cycle Descriptions
The write cycle description table for CY7C1525JV18 follows. [2, 8]
BWS0
K
Comments
L
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
No data is written into the device during this portion of a write operation.
H
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1514JV18 follows. [2, 8]
BWS0
BWS1
BWS2
BWS3
K
Comments
LLLL
L–H
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
LLLL
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
L–H
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
H
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
L
H
L–H
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
L–H
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
H
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
L–H
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
L
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
HHHH
L–H
No data is written into the device during this portion of a write operation.
HHHH
L–H No data is written into the device during this portion of a write operation.
相關(guān)PDF資料
PDF描述
CY7C1515AV18-250BZXI 2M X 36 QDR SRAM, 0.45 ns, PBGA165
CY7C1522JV18-250BZI 8M X 8 DDR SRAM, 0.45 ns, PBGA165
CY7C1524KV18-333BZI 2M X 36 DDR SRAM, 0.45 ns, PBGA165
CY7C1612KV18-333BZXC 8M X 18 QDR SRAM, PBGA165
CY7C256-45PC 32K X 8 OTPROM, 45 ns, PDIP28
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1512KV18-200BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb x 18 200 MHz RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-200BZXI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1512KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-250BZCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72MB 2.9V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512KV18-250BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray