參數(shù)資料
型號(hào): CY7C1524KV18-333BZI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 13 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁數(shù): 16/32頁
文件大?。?/td> 883K
代理商: CY7C1524KV18-333BZI
CY7C1522KV18, CY7C1529KV18
CY7C1523KV18, CY7C1524KV18
Document Number: 001-00438 Rev. *F
Page 23 of 32
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V
2
pF
CO
Output Capacitance
3pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
165 FBGA
Package
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
13.7
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
3.73
°C/W
Figure 4. AC Test Loads and Waveforms
1.25V
0.25V
R = 50
Ω
5pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
Device
RL = 50Ω
Z0 = 50Ω
VREF = 0.75V
0.75V
Under
Test
0.75V
Device
Under
Test
OUTPUT
0.75V
VREF
OUTPUT
ZQ
(a)
Slew Rate = 2 V/ns
RQ =
250
Ω
(b)
RQ =
250
Ω
Note
20. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250
Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms.
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