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參數(shù)資料
| 型號： | IS43R16160A-6T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 16 256-MBIT DDR SDRAM |
| 中文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | PLASTIC, TSOP2-66 |
| 文件頁數(shù)： | 15/56頁 |
| 文件大?。?/td> | 792K |
| 代理商： | IS43R16160A-6T |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
15
ISSI
IS43R16160A
Read Interrupted by a Precharge
A Burst Read operation can be interrupted by a precharge of the same bank. The Precharge command to
Output Disable latency is equivalent to the CAS latency.
Read Interrupted by a Precharge Timing
Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock. The address inputs determine the starting column address. The memory controller is re-
quired to provide an input data strobe (DQS) to the DDR SDRAM to strobe or latch the input data (DQ) and
data mask (DM) into the device. During Write cycles, the data strobe applied to the DDR SDRAM is required
to be nominally centered within the data (DQ) and data mask (DM) valid windows. The data strobe must be
driven high nominally one clock after the write command has been registered. Timing parameters t
DQSS
(min)
and t
DQSS
(max) define the allowable window when the data strobe must be driven high.
Input data for the first Burst Write cycle must be applied one clock cycle after the Write command is
registered into the device (WL=1). The input data valid window is nominally centered around the midpoint of
the data strobe signal. The data window is defined by DQ to DQS setup time (t
QDQSS
) and DQ to DQS hold
time (t
QDQSH
). All data inputs must be supplied on each rising and falling edge of the data strobe until the burst
length is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored.
Write Preamble and Postamble Operation
Prior to a burst of write data and given that the controller is not currently in burst write mode, the data strobe
signal (DQS), must transition from Hi-Z to a valid logic low. This is referred to as the data strobe “write preamble”.
This transition from Hi-Z to logic low nominally happens on the falling edge of the clock after the write com-
mand has been registered by the device. The preamble is explicitly defined by a setup time (t
WPRES
(min)) and
hold time (t
WPREH
(min)) referenced to the first falling edge of CK after the write command.
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
NOP
Read
NOP
NOP
Pre
A
NOP
BA
NOP
CK, CK
Command
DQS
DQ
t
RAS
(min)
t
RP
(min)
BA
NOP
T9
D
0
CAS Latency=2.5
D
1
D
2
D
3
DQS
DQ
CAS Latency=2
(CAS Latency = 2, 2.5; Burst Length = 4)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS43R16160A | 16Meg x 16 256-MBIT DDR SDRAM |
| IS43R16320A | 32Meg x 16 512-MBIT DDR SDRAM |
| IS43R16320A-6TL | 32Meg x 16 512-MBIT DDR SDRAM |
| IS43R16800A-6 | 8Meg x 16 128-MBIT DDR SDRAM |
| IS43R16800A-6T | 8Meg x 16 128-MBIT DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R16160B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM |
| IS43R16160B-5BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM |
| IS43R16160B-5BL | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16160B-5BLI | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16160B-5BLI-TR | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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