參數(shù)資料
型號(hào)： IS43R16160A-6T
廠(chǎng)商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 7/56頁(yè)
文件大小： 792K
代理商： IS43R16160A-6T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
7
ISSI
IS43R16160A
Mode Register Set Timing
Burst Mode Operation
Burst Mode Operation is used to provide a constant flow of data to memory locations (Write cycle), or from
memory locations (Read cycle). Two parameters define how the burst mode will operate: burst sequence and
burst length. These parameters are programmable and are determined by address bits A
0
—A
3
during the
Mode Register Set command. Burst type defines the sequence in which the burst data will be delivered or
stored to the SDRAM. Two types of burst sequence are supported: sequential and interleave. The burst
length controls the number of bits that will be output after a Read command, or the number of bits to be input
after a Write command. The burst length can be programmed to values of 2, 4, or 8. See the Burst Length
and Sequence table below for programming information.
Burst Length and Sequence
Burst Length
Starting Length (A
2
, A
1
, A
0
)
Sequential Mode
Interleave Mode
2
xx0
0, 1
0, 1
xx1
1, 0
1, 0
4
x00
0, 1, 2, 3
0, 1, 2, 3
x01
1, 2, 3, 0
1, 0, 3, 2
x10
2, 3, 0, 1
2, 3, 0, 1
x11
3, 0, 1, 2
3, 2, 1, 0
8
000
0,1, 2, 3, 4, 5, 6, 7
0,1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
T5
T0
T1
T2
T3
T4
T6
T7
T8
t
RP
t
MRD
t
CK
Pre- All
MRS/EMRS
ANY
Mode Register set (MRS) or Extended Mode Register Set (EMRS) can be issued only when all banks are in the idle state.
CK, CK
Command
If a MRS command is issued to reset the DLL, then an additional 200 clocks must occur prior to issuing any new command
to allow time for the DLL to lock onto the clock.
T9
相關(guān)PDF資料
PDF描述
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6T 8Meg x 16 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160B 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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