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參數(shù)資料
| 型號： | IS43R16160A-6T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 16 256-MBIT DDR SDRAM |
| 中文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | PLASTIC, TSOP2-66 |
| 文件頁數(shù)： | 26/56頁 |
| 文件大?。?/td> | 792K |
| 代理商： | IS43R16160A-6T |
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26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
NOTE: (continued)
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD is
met. Once
t
RCD is met, the bank will be in the “row active” state.
Read w/Auto-Precharge Enabled: Starts with registration of a READ command with AUTO PRECHARGE
enabled and ends when
t
RP has been met. Once
t
RP is met, the bank will
be in the idle state.
Write w/Auto-Precharge Enabled: Starts with registration of a WRITE command with AUTO PRECHARGE
enabled and ends when
t
RP has been met. Once
t
RP is met, the bank will
be in the idle state.
5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be
applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when
t
RC is met. Once
t
RFC is met, the DDR SDRAM will be in the “all banks
idle” state.
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends
when
t
MRD has been met. Once
t
MRD is met, the DDR SDRAM will be in
the “all banks idle” state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP is met. Once
t
RP is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle and no bursts are in progress.
8. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank.
10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE
enabled and READs or WRITEs with AUTO PRECHARGE disabled.
11. Requires appropriate DM masking.
相關PDF資料 |
PDF描述 |
|---|---|
| IS43R16160A | 16Meg x 16 256-MBIT DDR SDRAM |
| IS43R16320A | 32Meg x 16 512-MBIT DDR SDRAM |
| IS43R16320A-6TL | 32Meg x 16 512-MBIT DDR SDRAM |
| IS43R16800A-6 | 8Meg x 16 128-MBIT DDR SDRAM |
| IS43R16800A-6T | 8Meg x 16 128-MBIT DDR SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R16160B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM |
| IS43R16160B-5BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM |
| IS43R16160B-5BL | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16160B-5BLI | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16160B-5BLI-TR | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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