參數(shù)資料
型號: IS43R16160A-6T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: PLASTIC, TSOP2-66
文件頁數(shù): 45/56頁
文件大?。?/td> 792K
代理商: IS43R16160A-6T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
45
ISSI
IS43R16160A
Figure 38 - INITIALIZE AND MODE REGISTER SETS
CKE
LVCMOS LOW LEVEL
DQ
BA0, BA1
200 cycles of CLK**
Extended
Mode
Register
Set
Load
Mode
Register,
Reset DLL
(with A8 = H)
Load
Mode
Register
(with A8 = L)
tMRD
tMRD
tMRD
tRP
tRFC
tRFC
tIS
Power-up:
VDD and
CLK stable
T = 200
μ
s
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High-Z
tIH
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()()
()()
()()
DQS
High-Z
()()
()()
()()
()()
()()
()()
()()
()()
()()
()()
A0-A9, A11
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A10
ALL BANKS
DON'T CARE
CK
/CK
tCK
tCH
tCL
VTT
(system*)
tVTD
VREF
VDD
VDDQ
COMMAND
MRS
NOP
PRE
EMRS
AR
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AR
tIS
tIH
BA1=L
tIS
tIH
tIS
tIH
BA1=L
tIS
tIH
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CODE
tIS
tIH
CODE
MRS
BA1=L
CODE
CODE
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PRE
ALL BANKS
tIS
tIH
RA
RA
ACT
BA
* = VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up.
** = tMRD is required before any command can be applied, and 200 cycles of CK are required before a READ command can be applied.
The two Auto Refresh commands may be moved to follow the first MRS, but precede the second PRECHARGE ALL command.
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CODE
CODE
相關(guān)PDF資料
PDF描述
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6T 8Meg x 16 128-MBIT DDR SDRAM
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IS43R16160B-5BLI-TR 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube