參數(shù)資料
型號(hào)： IS43R16160A-6T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 6/56頁(yè)
文件大小： 792K
代理商： IS43R16160A-6T
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
Mode Register Set (MRS)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs
CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to
make DDR SDRAM useful for a variety of different applications. The default value of the mode register is not
defined, therefore the mode register must be written after EMRS setting for proper DDR SDRAM operation.
The mode register is written by asserting low on CS, RAS, CAS, WE and BA
0
(The DDR SDRAM should be
in all bank precharge with CKE already high prior to writing into the mode register). The state of address pins
A
0
~ A
12
in the same cycle as CS, RAS, CAS, WE and BA0 low is written in the mode register. Two clock
cycles are required to meet t
MRD
spec. The mode register contents can be changed using the same com-
mand and clock cycle requirements during operation as long as all banks are in the idle state. The mode reg-
ister is divided into various fields depending on functionality. The burst length uses A
0
~ A
2
, addressing mode
uses A
3
, CAS latency (read latency from column address) uses A
4
~ A
6
. A
7
is a specific test mode
during production test. A
8
is used for DLL reset. A
7
must be set to low for normal MRS operation. Refer to
the table for specific codes for various burst length, addressing modes and CAS latencies.
1.
MRS can be issued only at all banks precharge state.
2.
Minimum tRP is required to issue MRS command.
Address Bus
CAS Latency
A
6
A
5
0
0
0
0
1
1
1
1
A
4
0
1
0
1
0
1
0
1
Latency
Reserve
Reserve
2
3
Reserve
Reserve
2.5
Reserve
0
0
1
1
0
0
1
1
Burst Length
A
2
A
1
A
0
Latency
Sequential
Reserve
2
4
8
Reserve
Reserve
Reserve
Reserve
Interleave
Reserve
2
4
8
Reserve
Reserve
Reserve
Reserve
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
A
7
0
1
mode
Normal
Test
A
3
0
1
Burst Type
Sequential
Interleave
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
A
8
0
1
DLL Reset
No
Yes
Mode Register Set
0
RFU : Must be set "0"
Extended Mode Register
Mode Register
DLL
I/O
A
0
0
1
DLL Enable
Enable
Disable
A
1
0
1
I/O Strength
Full
Half
BA
0
0
1
A
n
~ A
0
(Existing)MRS Cycle
Extended Funtions(EMRS)
Command
2
0
1
5
3
4
8
6
7
CK, CK
t
CK
t
MRD
Precharge
All Banks
Mode
Register Set
t
RP
*2
*1
Any
Command
BA
1
BA
0
A
3
A
2
A
1
A
0
0
TM
CAS Latency
BT
Burst Length
RFU
DLL
MRS
MRS
A
12
to
0
相關(guān)PDF資料
PDF描述
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6T 8Meg x 16 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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