參數(shù)資料
型號(hào)： K4T1G044QQ-HC(L)E6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Q-die DDR2 SDRAM Specification
中文描述： 1Gb的調(diào)Q DDR2內(nèi)存芯片規(guī)格
文件頁(yè)數(shù)： 13/44頁(yè)
文件大?。?/td> 891K
代理商： K4T1G044QQ-HC(L)E6
K4T1G084QQ
K4T1G164QQ
Rev. 1.01 November 2007
DDR2 SDRAM
13 of 44
K4T1G044QQ
V
DDQ
Crossing point
V
SSQ
V
TR
V
CP
V
ID
V
IX or
V
OX
< Differential signal levels >
7.6 Differential input AC logic Level
Note :
1. V
ID
(AC) specifies the input differential voltage |V
TR
-V
CP
| required for switching, where V
TR
is the true input signal (such as CK, DQS, LDQS or UDQS)
and V
CP
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
IH
(AC) - V
IL
(AC).
2. The typical value of V
IX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
IX
(AC) is expected to track variations in VDDQ .
V
IX
(AC) indicates the voltage at which differential input signals must cross.
7.7 Differential AC output parameters
Note :
1. The typical value of V
OX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
OX
(AC) is expected to track variations in VDDQ .
V
OX
(AC) indicates the voltage at which differential output signals must cross.
Symbol
Parameter
Min.
Max.
Units
Notes
V
ID(AC)
AC differential input voltage
0.5
V
DDQ
+ 0.6
V
1
V
IX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
Symbol
Parameter
Min.
Max.
Units
Note
V
OX
(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V
IH
(ac) and V
IL
(ac) to test pin separately, then measure current I(V
IH
(ac)) and I( V
IL
(ac)) respectively. V
IH
(ac), V
IL
(ac), and VDDQ values defined in SSTL_18
Measurement Definition for VM: Measure voltage (V
M
) at test pin (midpoint) with no load.
PARAMETER/CONDITION
SYMBOL
MIN
NOM
MAX
UNITS
NOTES
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt1(eff)
60
75
90
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt2(eff)
120
150
180
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Rtt3(eff)
40
50
60
ohm
1
Deviation of VM with respect to VDDQ/2
delta VM
- 6
+ 6
%
1
Rtt(eff) =
V
IH
(ac)
-
V
IL
(ac)
I(
V
IH
(ac)
) - I(
V
IL
(ac)
)
delta VM =
2 x Vm
VDDQ
x 100%
- 1
8.0 ODT DC electrical characteristics
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