參數(shù)資料
型號： K4T1G044QQ-HC(L)E6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Q-die DDR2 SDRAM Specification
中文描述： 1Gb的調(diào)Q DDR2內(nèi)存芯片規(guī)格
文件頁數(shù)： 23/44頁
文件大?。?/td> 891K
代理商： K4T1G044QQ-HC(L)E6
K4T1G084QQ
K4T1G164QQ
Rev. 1.01 November 2007
DDR2 SDRAM
23 of 44
K4T1G044QQ
15.0 Specific Notes for dedicated AC parameters
1.
User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2.
AL = Additive Latency.
3.
This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4.
A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5.
Timings are specified with command/address input slew rate of 1.0 V/ns.
6.
Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7.
Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8.
Data setup and hold time derating.
Table 1 - DDR2-400/533 tDS/tDH derating with differential data strobe
Table 2 - DDR2-667/800 tDS/tDH derating with differential data strobe
tDS,
tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
DQ
Siew
rate
V/ns
2.0
125
45
125
45
125
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
83
21
83
21
83
21
95
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-11
-14
-11
-14
1
-2
13
10
25
22
-
-
-
-
-
-
0.8
-
-
-
-
-25
-31
-13
-19
-1
-7
11
5
23
17
-
-
-
-
0.7
-
-
-
-
-
-
-31
-42
-19
-30
-7
-18
5
-6
17
6
-
-
0.6
-
-
-
-
-
-
-
-
-43
-59
-31
-47
-19
-35
-7
-23
5
-11
0.5
-
-
-
-
-
-
-
-
-
-
-74
-89
-62
-77
-50
-65
-38
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-127
-140
-115
-128
-103
-116
tDS,
tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
DQ
Slew
rate
V/ns
2.0
100
45
100
45
100
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
21
67
21
67
21
79
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
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