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參數(shù)資料
| 型號(hào)： | K4T1G044QQ-HC(L)E6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb Q-die DDR2 SDRAM Specification |
| 中文描述： | 1Gb的調(diào)Q DDR2內(nèi)存芯片規(guī)格 |
| 文件頁數(shù)： | 14/44頁 |
| 文件大小： | 891K |
| 代理商： | K4T1G044QQ-HC(L)E6 |
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K4T1G084QQ
K4T1G164QQ
Rev. 1.01 November 2007
DDR2 SDRAM
14 of 44
K4T1G044QQ
9.0 OCD default characteristics
Note :
1. Absolute Specifications (0°C
≤
T
CASE
≤
+95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for
values of VOUT between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from V
IL
(AC) to V
IH
(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.
Description
Parameter
Min
Nom
Max
Unit
Notes
Output impedance
Normal 18ohms
See full strength default driver characteristics
ohms
1,2
Output impedance step size for OCD calibration
0
1.5
ohms
6
Pull-up and pull-down mismatch
0
4
ohms
1,2,3
Output slew rate
Sout
1.5
5
V/ns
1,4,5,6,7,8
25 ohms
V
TT
Output
(V
OUT)
Reference
Point
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