- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373069 > K4T1G044QQ-HC(L)E6 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb Q-die DDR2 SDRAM Specification PDF資料下載
參數(shù)資料
| 型號： | K4T1G044QQ-HC(L)E6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb Q-die DDR2 SDRAM Specification |
| 中文描述： | 1Gb的調Q DDR2內存芯片規(guī)格 |
| 文件頁數(shù)： | 44/44頁 |
| 文件大?。?/td> | 891K |
| 代理商： | K4T1G044QQ-HC(L)E6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁當前第44頁
K4T1G084QQ
K4T1G164QQ
Rev. 1.01 November 2007
DDR2 SDRAM
44 of 44
K4T1G044QQ
44.
For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH pulse width of 0.5 relative to tCK. tAOF,min and
tAOF,max should each be derated by the same amount as the actual amount of tCH offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH of 0.45, the tAOF,min should be derated by subtracting 0.05 x tCK from it, whereas if an input clock
has a worst case tCH of 0.55, the tAOF,max should be derated by adding 0.05 x tCK to it. Therefore, we have;
tAOF,min(derated) = tAC,min - [0.5 - Min(0.5, tCH,min)] x tCK
tAOF,max(derated) = tAC,max + 0.6 + [Max(0.5, tCH,max) - 0.5] x tCK
or
tAOF,min(derated) = Min(tAC,min, tAC,min - [0.5 - tCH,min] x tCK)
tAOF,max(derated) = 0.6 + Max(tAC,max, tAC,max + [tCH,max - 0.5] x tCK)
where tCH,min and tCH,max are the minimum and maximum of tCH actually measured at the DRAM input balls.
45.
For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to
tCK(avg). tAOF,min and tAOF,max should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input
with respect to 0.5.
For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOF,min should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an
input clock has a worst case tCH(avg) of 0.52, the tAOF,max should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have;
tAOF,min(derated) = tAC,min - [0.5 - Min(0.5, tCH(avg),min)] x tCK(avg)
tAOF,max(derated) = tAC,max + 0.6 + [Max(0.5, tCH(avg),max) - 0.5] x tCK(avg)
tAOF,min(derated) = Min(tAC,min, tAC,min - [0.5 - tCH(avg),min] x tCK(avg))
tAOF,max(derated) = 0.6 + Max(tAC,max, tAC,max + [tCH(avg),max - 0.5] x tCK(avg))
where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.
Note
that these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the
equations shown above are from the timing parameter table and are not derated. Thus the final derated values for tAOF are;
tAOF,min(derated_final) = tAOF,min(derated) + { - tJIT(duty),max - tERR(6-10per),max }
tAOF,max(derated_final) = tAOF,max(derated) + { - tJIT(duty),min - tERR(6-10per),min }
相關PDF資料 |
PDF描述 |
|---|---|
| K4T1G044QQ-HC(L)E7 | 1Gb Q-die DDR2 SDRAM Specification |
| K4T1G044QQ-HC(L)F7 | 1Gb Q-die DDR2 SDRAM Specification |
| K4T1G084QQ | 1Gb Q-die DDR2 SDRAM Specification |
| K4T1G084QQ-HC(L)E6 | 1Gb Q-die DDR2 SDRAM Specification |
| K4T1G084QQ-HC(L)E7 | 1Gb Q-die DDR2 SDRAM Specification |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4T1G044QQ-HCLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G044QQ-HCLF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G084QAZCD5 | 制造商:Samsung Semiconductor 功能描述: |
| K4T1G084QA-ZCD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb A-die DDR2 SDRAM Specification |
| K4T1G084QA-ZCE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb A-die DDR2 SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復。