參數(shù)資料
型號(hào): K4T1G044QQ-HC(L)E6
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb Q-die DDR2 SDRAM Specification
中文描述: 1Gb的調(diào)Q DDR2內(nèi)存芯片規(guī)格
文件頁(yè)數(shù): 25/44頁(yè)
文件大?。?/td> 891K
代理商: K4T1G044QQ-HC(L)E6
K4T1G084QQ
K4T1G164QQ
Rev. 1.01 November 2007
DDR2 SDRAM
25 of 44
K4T1G044QQ
V
SS
tDS
tDH
Setup Slew Rate
Rising Signal
Setup Slew Rate
Falling Signal
TF
TR
V
REF(dc)
- Vil(ac)max
TF
=
Vih(ac)min - V
REF(dc)
TR
=
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF(dc)
V
IL(dc)
max
V
IL(ac)
max
nominal slew
rate
nominal
slew rate
VREF to ac
region
VREF to ac
region
tDS
tDH
tVAC
DQS
DQS
Figure 5 - IIIustration of nominal slew rate for tDS (differential DQS,DQS)
相關(guān)PDF資料
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K4T1G044QQ-HC(L)E7 1Gb Q-die DDR2 SDRAM Specification
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K4T1G084QQ-HC(L)E6 1Gb Q-die DDR2 SDRAM Specification
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