參數(shù)資料
型號(hào): MBM29F800B-12
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內(nèi)存(單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器)
文件頁(yè)數(shù): 9/51頁(yè)
文件大小: 642K
代理商: MBM29F800B-12
9
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
= Pulse input. See DC Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer
to Table 7.
2. Refer to the section on Sector Protection.
3. WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
Table 2 MBM29F800T/B User Bus Operation (BYTE = V
IH
)
Operation
CE
OE
WE
A
0
A
1
A
6
A
9
DQ
0
to DQ
15
RESET
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
V
ID
Code
H
Auto-Select Device Code (1)
L
L
H
H
L
L
V
ID
Code
H
Read (3)
L
L
H
A
0
A
1
A
6
A
9
D
OUT
H
Standby
H
X
X
X
X
X
X
HIGH-Z
H
Output Disable
L
H
H
X
X
X
X
HIGH-Z
H
Write
L
H
L
A
0
A
1
A
6
A
9
D
IN
H
Enable Sector Protection (2)
L
V
ID
X
X
L
V
ID
X
H
Verify Sector Protection (2)
L
L
H
L
H
L
V
ID
Code
H
Temporary Sector Unprotection
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)/Standby
X
X
X
X
X
X
X
HIGH-Z
L
Table 3 MBM29F800T/B User Bus Operation (BYTE = V
IL
)
Operation
CE
OE
WE
DQ
15
/A
-1
A
0
A
1
A
6
A
9
DQ
0
to DQ
7
RESET
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
L
V
ID
Code
H
Auto-Select Device Code (1)
L
L
H
L
H
L
L
V
ID
Code
H
Read (2)
L
L
H
A
-1
A
0
A
1
A
6
A
9
D
OUT
H
Standby
H
X
X
X
X
X
X
X
HIGH-Z
H
Output Disable
L
H
H
X
X
X
X
X
HIGH-Z
H
Write
L
H
L
A
-1
A
0
A
1
A
6
A
9
D
IN
H
Enable Sector Protection (2)
L
V
ID
X
X
X
L
V
ID
X
H
Verify Sector Protection (2)
L
L
H
L
L
H
L
V
ID
Code
H
Temporary Sector Unprotection
X
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)/Standby
X
X
X
X
X
X
X
X
HIGH-Z
L
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MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
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