參數(shù)資料
型號: MBM29F800B-12
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內(nèi)存(單5V的電源電壓100萬× 8/512K × 6位閃速存儲器)
文件頁數(shù): 47/51頁
文件大?。?/td> 642K
代理商: MBM29F800B-12
47
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP PIN CAPACITANCE
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
I
SOP PIN CAPACITANCE
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
Parameter
Limits
Unit
Comment
Min.
Typ.
Max.
Sector Erase Time
1
15
sec
Excludes 00H programming
prior to erasure
Byte Programming Time
8
500
μ
s
Excludes system-level
overhead
Chip Programming Time
8.4
50
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
Cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8.5
12.5
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8.5
12.5
pF
相關(guān)PDF資料
PDF描述
MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800T-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
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