參數(shù)資料
型號(hào)： MBM29F800B-12
廠商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬× 8/512K × 6位閃速存儲(chǔ)器）
文件頁數(shù)： 23/51頁
文件大?。?/td> 642K
代理商： MBM29F800B-12
23
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
I
ABSOLUTE MAXIMUM RATINGS
Storage Temperature ..................................................................................................–55
°
C to +125
°
C
Ambient Temperature with Power Applied...................................................................–25
°
C to +85
°
C
Voltage with respect to Ground All pins except A
9
, OE, RESET (Note 1)...................–2.0 V to +7.0 V
V
CC
(Note 1) ................................................................................................................–2.0 V to +7.0 V
A
9
, OE, RESET (Note 2).............................................................................................–2.0 V to +13.5 V
Notes:
1. Minimum DC voltage on input or I/O pins are –0.5 V. During voltage transitions, inputs may negative
overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are
V
CC
+0.5 V. During voltage transitions, outputs may positive overshoot to V
CC
+2.0 V for periods of up
to 20 ns.
2. Minimum DC input voltage on A
9
, OE, RESET pins are –0.5 V. During voltage transitions, A
9
, OE,
RESET pins may negative overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC input
voltage on A
9
, OE, RESET pins are +13.0 V which may positive overshoot to 13.5 V for periods of up to
20 ns.
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING RANGES
Commercial Devices
Ambient Temperature (TA) ...........................................................................–20
°
C to +70
°
C
V
CC
Supply Voltages.....................................................................................+4.50 V to +5.50 V
Operating ranges define those limits between which the functionality of the devices are guaranteed.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device.
All the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their FUJITSU representative beforehand.
相關(guān)PDF資料
PDF描述
MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800T-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F800B-90PFTN# 制造商:FUJITSU 功能描述:
MBM29F800BA 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800BA-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800BA-55PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800BA-55PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
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