參數(shù)資料
型號(hào)： T431616D-5S
廠商： Electronic Theatre Controls, Inc.
英文描述： 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述： 100萬(wàn)× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù)： 56/74頁(yè)
文件大?。?/td> 781K
代理商： T431616D-5S
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 6
Publication Date: FEB. 2007
to change products or specifications without notice.
Revision: A
Commands
1
BankPrecharge command
(RAS# = "L", CAS# = "H", WE# = "L", A11 = “V”, A10 = "L", A0-A9 = Don't care)
The BankPrecharge command precharges the bank disignated by A11 signal. The precharged bank is
switched from the active state to the idle state. This command can be asserted anytime after tRAS(min.) is satisfied
from the BankActivate command in the desired bank. The maximum time any bank can be active is specified by
tRAS(max.). Therefore, the precharge function must be performed in any active bank within tRAS(max.). At the
end of precharge, the precharged bank is still in the idle state and is ready to be activated again.
2
PrechargeAll command
(RAS# = "L", CAS# = "H", WE# = "L", A11 = Don't care, A10 = "H", A0-A9 = Don't care)
The PrechargeAll command precharges both banks simultaneously and can be issued even if both banks are
not in the active state. Both banks are then switched to the idle state.
3
Read command
(RAS# = "H", CAS# = "L", WE# = "H", A11= “V”, A9 = "L", A0-A7 = Column Address)
The Read command is used to read a burst of data on consecutive clock cycles from an active row in an
active bank. The bank must be active for at least tRCD(min.) before the Read command is issued. During read
bursts, the valid data-out element from the starting column address will be available following the CAS# latency
after the issue of the Read command. Each subsequent data-out element will be valid by the next positive clock
edge (refer to the following figure). The DQs go into high-impedance at the end of the burst unless other
command is initiated. The burst length, burst sequence, and CAS# latency are determined by the mode register,
which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap
to column 0 and continue).
CLK
COM MAND
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
T0
T1
T2T3
T4T5
T6
T7
T8
READ A
NOP
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Burst Read Operation(Burst Length = 4, CAS# Latency = 1, 2, 3)
相關(guān)PDF資料
PDF描述
T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T450N 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
T451N 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
T523-020.00M TCXO, CLIPPED SINE OUTPUT, 20 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T431616D-5SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-6C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-6CG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-6S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-6SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*