參數(shù)資料
型號: TS8882VF20
文件頁數(shù): 7/42頁
文件大小: 1703K
代理商: TS8882VF20
7
TS68882
2119A
12/01
Package
The macrocircuits are packaged in hermetically sealed ceramic packages which are conform
to case outlines of MIL-STD-1835 (when defined):
68-PIN SQ.PGA UP PAE Outline
68-PIN Ceramic Quad Flat Pack CQFP
The precise case outlines are described on Figure 23 and Figure 24.
Electrical
Characteristics
Recommended
Condition of Use
Unless otherwise stated, all voltages are referenced to the reference terminal (see Table 1.).
Notes:
1. Test load, see Figure 5.
2. Capacitance is periodically sampled rather than 100% tested.
Table 2.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Max
Unit
V
CC
Supply Voltage
-0.3
+7.0
V
V
I
Input Voltage
-0.3
+7.0
V
P
dmax
Max Power Dissipation
T
case
= -55
°
C to +125
°
C
0.75
W
T
case
Operating Temperature
M Suffix
-55
+125
°
C
V Suffix
-40
+85
°
C
T
stg
Storage Temperature
-55
+150
°
C
T
leads
Lead Temperature
Max 5 sec. Soldering
+270
°
C
Table 3.
DC Electrical Characteristics
V
CC
= 5.0 V
dc
± 10%; GND = 0 V
dc
; Tc = -55
°
C to +125
°
C
Symbol
Parameter
Min
Max
Unit
V
CC
Supply Voltage
4.5
5.5
V
T
case
Operating Temperature
-55
+125
°
C
V
IH
Input High Voltage
2.0
V
CC
V
V
IL
Input Low Voltage
GND - 0.3
0.8
V
I
IN
Input Leakage Current @ 5.5V CLK, RESET, R/W, A0-A4, CS, DS, AS, SIZE
10
μA
I
TSI
HI-Z (Off state) Input Current @ 2.4V/0.4V DSACK0, DSACK1, D0-D31
20
μA
V
OH
Output High Voltage (IOH = -400 μA)
(1)
DSACK0, DSACK1, D0-D31
2.4
V
V
OL
Output Low Voltage (IOL = 5.3 mA)
(1)
DSACK0, DSACK1, D0-D31
0.5
V
I
OL
Output Low Current (VOL = GND) SENSE
500
μA
P
D
Power Dissipation
0.75
W
C
in
Capacitance (V
IN
= 0, T
A
= 25
°
C, f = 1 MHz)
(2)
20
pF
C
L
Output Load Capacitance
130
pF
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