參數(shù)資料
型號(hào): UM_S3C49F9X
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: S3C49F9X User’s Manual
中文描述: S3C49F9X用戶手冊(cè)
文件頁數(shù): 2/74頁
文件大?。?/td> 653K
代理商: UM_S3C49F9X
S3C49F9X SOLID DISK CONTROLLER INRODUCTION
1
2
PRODUCT OVERVIEW
Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state
disk. It provides PC Card ATA/IDE interface, host and flash transfer rates up to 20.0MB/S. S3C49F9X
can control flash memory maximum 10 pieces if use the 32M,64M,128M,512Mbit and can control flash
memory maximum 8 pieces if use the 1Gbit. The device is designed using 0.35-um CMOS process,
housed in a 100-TQFP package. It supports operation in both 5.0V and 3.3V.
An outstanding feature of the S3C49F9X flash disk controller is its CPU core: the ARM7TDMI 16/32-bit
RISC processor, designed by Advanced RISC Machine (ARM), Ltd. The ARM core is a low-power,
general purpose, microprocessor macro-cell that was developed for use in application-specific and
customer-specific intergrated circuit. It is simple, elegant, and fully static design is particularly suitable for
cost and power sensitive application
1.1 Features
- PC Card-ATA/True IDE/CompactFlash compatible host interface
- Automatic sensing of PC Card ATA and 68-pin IDE
- Included 256-byte CIS RAM
- Five PC Card ATA addressing modes
- Host data transfer rate : 20MB/S
- Flash data transfer rate : 10MB/S
- Host Interface : 8/16-bit Access
- Flash Interface : 8-bit Access
- Support 3 power save mode : stop/idle/active
- Support up to 10 flash memories
- Support 32/64/128/256/512Mbit,1Gbit NAND flash memory made by Samsung
NAND Flash Density
32Mb, 64Mb, 128Mb, 256Mb, 512Mb
1Gb
Min. / Max. Capacity (number of flash)
4MB / 512MB (Up to 10ea)
128MB/1GB (Up to 8ea)
- Auto power down function
- ECC function
- Available 100-pin TQFP
- Operating Voltage : 3.3V to 5.0V
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