參數(shù)資料
型號(hào): 28F008S
廠商: Intel Corp.
英文描述: 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器)
中文描述: 8兆(1兆比特× 8)FLASHFILE內(nèi)存(8米位(1米位× 8)閃速存儲(chǔ)器)
文件頁數(shù): 23/28頁
文件大?。?/td> 347K
代理商: 28F008S
28F008SA-L
AC CHARACTERISTICSDWrite Operations
(1)
V
CC
e
3.3V
g
0.3V, 5.0V
g
10%
Versions
28F008SA-L200
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
WC
Write Cycle Time
200
ns
t
PHWL
t
PS
RP
Y
High Recovery to WE
Y
Going Low
2
1
m
s
t
ELWL
t
CS
CE
Y
Setup to WE
Y
Going Low
20
ns
t
WLWH
t
WP
WE
Y
Pulse Width
60
ns
t
VPWH
t
VPS
V
PP
Setup to WE
Y
Going High
Address Setup to WE
Y
Going High
2
100
ns
t
AVWH
t
AS
3
60
ns
t
DVWH
t
DS
Data Setup to WE
Y
Going High
4
60
ns
t
WHDX
t
DH
Data Hold from WE
Y
High
5
ns
t
WHAX
t
AH
Address Hold from WE
Y
High
5
ns
t
WHEH
t
CH
CE
Y
Hold from WE
Y
High
10
ns
t
WHWL
t
WPH
WE
Y
Pulse Width High
30
ns
t
WHRL
WE
Y
High to RY/BY
Y
Going Low
100
ns
t
WHQV1
Duration of Byte Write Operation
5, 6
6
m
s
t
WHQV2
Duration of Block Erase Operation
5, 6
0.3
sec
t
WHGL
Write Recovery
before Read
0
m
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD, RY/BY
Y
High
2, 6
0
ns
NOTES:
1. Read timing characteristics during erase and byte write operations are the same as during read-only operations. Refer to
AC Characteristics for Read-Only Operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
IN
for byte write or block erasure.
4. Refer to Table 3 for valid D
for byte write or block erasure.
5. The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard
Intel flash memory, including byte program and verify (byte write) and block precondition, precondition verify, erase and
erase verify (block erase).
6. Byte write and block erase durations are measured to completion (SR.7
e
1, RY/BY
Y
e
V
OH
). V
PP
should be held at
V
PPH
until determination of byte write/block erase success (SR.3/4/5
e
0)
23
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