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參數(shù)資料
| 型號(hào)： | 28F008S |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器) |
| 中文描述： | 8兆（1兆比特× 8）FLASHFILE內(nèi)存（8米位（1米位× 8）閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 16/28頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | 28F008S |
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28F008SA-L
290435–17
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Write
Read
Data
e
70H
Status Register
Standby/
Read
Check RY/BY
Y
V
OH
e
Ready,
V
OL
e
Busy
or
Read Status Register
Check SR.7
1
e
Ready, 0
e
Busy
Toggle OE
Y
or CE
Y
to
Update Status Register
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from block
other than that being
erased.
Write
Erase Resume
Data
e
D0H
Figure 9. Erase Suspend/Resume Flowchart
Power Supply Decoupling
Flash memory power switching characteristics re-
quire careful device decoupling. System designers
are interested in 3 supply current issues; standby
current levels (I
SB
), active current levels (I
CC
) and
transient peaks produced by falling and rising edges
of CE
Y
. Transient current magnitudes depend on
the device outputs’ capacitive and inductive loading.
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks.
Each device should have a 0.1
m
F ceramic capacitor
connected between each V
CC
and GND, and be-
tween its V
PP
and GND. These high frequency, low
inherent-inductance capacitors should be placed as
close as possible to package leads. Additionally, for
every 8 devices, a 4.7
m
F electrolytic capacitor
should be placed at the array’s power supply con-
nection between V
CC
and GND. The bulk capacitor
will overcome voltage slumps caused by PC board
trace inductances.
V
PP
Trace on Printed Circuit Boards
Writing flash memories, while they reside in the tar-
get system, requires that the printed circuit board
designer pay attention to the V
PP
power supply
trace. The V
PP
pin supplies the memory cell current
for writing and erasing. Use similar trace widths and
layout considerations given to the V
CC
power bus.
Adequate V
PP
supply traces and decoupling will de-
crease V
PP
voltage spikes and overshoots.
16
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| 28F0101024K | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010 | 1024K (128K x 8) CMOS FLASH MEMORY |
| 28F016B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F032B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Byte-Wide Smart 3 Flashfile Memory Family 4 8 and |
| 28F008S5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F008SA | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SA-L | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SAT-ZW | 制造商: 功能描述: 制造商:undefined 功能描述: |
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