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| 型號(hào)： | 28F008S |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器) |
| 中文描述： | 8兆（1兆比特× 8）FLASHFILE內(nèi)存（8米位（1米位× 8）閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 2/28頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | 28F008S |
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28F008SA-L
PRODUCT OVERVIEW
The 28F008SA-L is a high-performance
8-Mbit
(8,388,608-bit) memory organized as
1 Mbyte
(1,048,576 bytes) of 8 bits each.
Sixteen 64-Kbyte
(65,536-byte)
blocks
28F008SA-L. A memory map is shown in Figure 6 of
this specification. A block erase operation erases
one of the sixteen blocks of memory in typically
2.0
seconds
, independent of the remaining blocks.
Each block can be independently erased and written
10,000 cycles
.
Erase Suspend
mode allows sys-
tem software to suspend block erase to read data or
execute
code
from
any
28F008SA-L.
are
included
on
the
other
block
of
the
The 28F008SA-L is available in the
40-lead TSOP
(Thin Small Outline Package, 1.2 mm thick) and
44-
lead PSOP
(Plastic Small Outline) packages. Pin-
outs are shown in Figures 2 and 4 of this specifica-
tion.
The
Command User Interface
serves as the inter-
face between the microprocessor or microcontroller
and the internal operation of the 28F008SA-L.
Byte Write and Block Erase Automation
allow
byte write and block erase operations to be execut-
ed using a two-write command sequence to the
Command User Interface. The internal
Write State
Machine
(WSM) automatically executes the algo-
rithms and timings necessary for byte write and
block
erase
operations,
thereby unburdening the microprocessor or micro-
controller. Writing of memory data is performed in
byte increments typically within 11
m
s,
I
PP
byte
write and block erase currents
are
10 mA typical,
30 mA maximum. V
PP
byte write and block erase
voltage
is
11.4V to 12.6V
.
including
verifications,
The
Status Register
indicates the status of the
WSM and when the WSM successfully completes
the desired byte write or block erase operation.
The
RY/BY
Y
output gives an additional indicator of
WSM activity, providing capability for both hardware
signal of status (versus software polling) and status
masking (interrupt masking for background erase,
for example). Status polling using RY/BY
Y
mini-
mizes both CPU overhead and system power con-
sumption. When low, RY/BY
Y
indicates that the
WSM is performing a block erase or byte write oper-
ation. RY/BY
Y
high indicates that the WSM is ready
for new commands, block erase is suspended or the
device is in deep powerdown mode.
Maximum access time is
200 ns (t
ACC
)
over the
commercial temperature range (0
§
C to
70
§
C) and
over V
CC
supply voltage range (3.0V to 3.6V and
4.5V to 5.5V).
I
CC
active current
(CMOS Read) is
5 mA typical, 12 mA maximum
at
5 MHz,
3.3V
g
0.3V.
When the CE
Y
and RP
Y
pins are at V
CC
, the
I
CC
CMOS Standby
mode is enabled.
A
Deep Powerdown
mode is enabled when the
RP
Y
pin is at GND, minimizing power consumption
and providing write protection.
I
CC
current
in deep
powerdown is
0.20
m
A typical
. Reset time of 500 ns
is required from RP
Y
switching high until outputs are
valid to read attempts. Equivalently, the device has a
wake time of 1
m
s from RP
Y
high until writes to the
Command User Interface are recognized by the
28F008SA-L. With RP
Y
at GND, the WSM is reset
and the Status Register is cleared.
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Byte-Wide Smart 3 Flashfile Memory Family 4 8 and |
| 28F008S5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F008SA | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SA-L | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SAT-ZW | 制造商: 功能描述: 制造商:undefined 功能描述: |
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