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參數(shù)資料
| 型號： | 28F016XD |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器) |
| 中文描述： | 16兆位同步閃存（1,600位內(nèi)存接口閃速存儲器） |
| 文件頁數(shù)： | 37/54頁 |
| 文件大?。?/td> | 760K |
| 代理商： | 28F016XD |
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E
Misc. Specifications
28F016XD FLASH MEMORY
37
Versions
28F016XD-85
Units
Parameter
Notes
Min
Max
RP# high to RAS# going low
10
300
ns
RP# set-up to WE# going low
10
300
ns
VPP set-up to CAS# high at end of write cycle
WE# high to RY/BY# going low
10
100
ns
10
100
ns
RP# hold from valid status register data and RY/BY# high
10
0
ns
VPP hold from valid status register data and RY/BY# high
10
0
ns
NOTES:
1.
2.
3.
4.
5.
Operation within the t
RCD(max)
limit insures that t
RAC(max)
can be met. t
RCD(max)
is specified as a reference point.
Assumes that t
RCD
≥
t
RCD(max)
.
t
AR
, t
WCR
, t
DHR
are referenced to t
RAD(max)
.
t
OFF(max)
defines the time at which the output achieves the open circuit condition and is not referenced to V
OH
or V
OL
.
t
WCS
, t
RWD
, t
CWD
and t
AWD
are non restrictive operating parameters. They are included in the datasheet as electrical
characteristics only. If t
WCS
≥
t
WCS(min)
the cycle is an early write cycle and the data output will remain high impedance for
the duration of the cycle. If t
CWD
≥
t
CWD(min)
, t
RWD
≥
t
RWD(min)
, t
AWD
≥
t
AWD(min)
, then the cycle is a read-write cycle and the data
output will contain the data read from the selected address. If neither of the above conditions are satisfied, the condition of
the data out is indeterminate.
Either t
RCH
or t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS# leading edge in early write cycles and to the WE# leading edge in read-
write cycles.
Operation within the t
RAD(max)
limit ensures that t
RAC(max)
can be met, t
RAD(max)
is specified as a reference point only. If t
RAD
is greater than the specified t
RAD(max)
limit, then the access time is controlled by t
AA
.
Refer to command definition tables for valid address and data values.
10. Sampled, but not 100% tested. Guaranteed by design.
11. See AC Input/Output Reference Waveforms for timing measurements.
6.
7.
8.
9.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 28F020-150 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F020G12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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