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參數(shù)資料
| 型號： | 28F016XD |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器) |
| 中文描述： | 16兆位同步閃存（1,600位內存接口閃速存儲器） |
| 文件頁數(shù)： | 4/54頁 |
| 文件大?。?/td> | 760K |
| 代理商： | 28F016XD |
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28F016XD FLASH MEMORY
E
4
REVISION HISTORY
Number
Description
-001
Original Version
-002
Removed support of the following features:
All page buffer operations (read, write, programming, Upload Device Information)
Command queuing
Software Sleep and Abort
Erase All Unlocked Blocks
Device Configuration command
Changed definition of
“NC.” Removed “No internal connection to die” from description.
Added “xx” to Upper Byte of Command (Data) Definition in Sections 4.2 and 4.3.
Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins.
Increased I
PPS
(V
PP
Read Current) for V
PP
> V
CC
to 200 μA at V
CC
= 3.3V/5.0V.
Changed V
CC
= 5.0V DC Characteristics (Section 5.5) marked with Note 1 to indicate
that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns
and a TTL rise/fall time of <10 ns.
Corrected “RP# high to RAS# going low” to be a “Min” specification at V
CC
= 3.3V/5.0V.
Increased Typical “Word/Block Program Times” (t
WHRH1
/t
WHRH3
) for V
PP
= 5.0V:
t
WHRH1
from 24.0 μs to 35.0 μs and t
WHRH3
from 0.8 sec to 1.2 sec at V
CC
= 3.3V
t
WHRH1
from 16.0 μs to 25.0 μs and t
WHRH3
from 0.6 sec to 0.85 sec at V
CC
= 5.0V
Changed “Time from Erase Suspend Command to WSM Ready” spec name to “Erase
Suspend Latency Time to Read;” modified typical values and added Min/Max
values at V
CC
=3.3/5.0V and V
PP
=5.0/12.0V (Section 5.10).
Minor cosmetic changes throughout document.
Added 3/5# pin to Pinout Configuration (Figure 2), Product Overview (Section 1.1) and
Lead Descriptions (Section 2.1)
Modified Block Diagram (Figure 1): Removed Address/Data Queues, Page Buffers, and
Address Counter; Added 3/5# pin
Added 3/5# pin to Test Conditions of I
CC
2 and I
CC
5 Specifications
Modified Power-Up and Reset Timings (Section 5.9) to include 3/5# pin: Removed t
5VPH
and t
3VPH
specifications; Added t
PLYL
, t
PLYH
, t
YLPH
, and t
YHPH
specifications
Corrected TSOP Mechanical Specification A1 from 0.50 mm to 0.050 mm (Section 6.0)
Minor cosmetic changes throughout document.
Updated DC Specifications I
CC
3, I
CC
4, I
CC
6, I
CC
7, I
CCD
and I
PPES
Updated AC Specifications t
CAS
(min), t
RCD
(max) and t
CWD
(min)
-003
-004
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 28F020-150 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F020G12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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