參數(shù)資料
型號: 28F020
廠商: Intel Corp.
英文描述: 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
中文描述: 5伏體擦除閃存(5V的整體擦寫閃速存儲器)
文件頁數(shù): 22/47頁
文件大小: 758K
代理商: 28F020
28F010/28F020
E
22
4.5
DC Characteristics
—28F020—TTL/NMOS Compatible
Commercial Products
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
LI
Input Leakage Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or V
SS
I
LO
Output Leakage Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or V
SS
I
CCS
V
CC
Standby Current
1
0.3
1.0
mA
V
CC
= V
CC
Max
CE# = V
IH
I
CC1
V
CC
Active Read Current
1
10
30
mA
V
CC
= V
CC
Max CE# = V
IL
f = 6 MHz
I
OUT
= 0 mA
I
CC2
V
CC
Programming Current
1, 2
1.0
10
mA
Programming in Progress
I
CC3
V
CC
Erase Current
1, 2
5.0
15
mA
Erasure in Progress
I
CC4
V
CC
Program Verify
Current
1, 2
5.0
15
mA
V
PP
= V
PPH
Program Verify
in Progress
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
15
mA
V
PP
= V
PPH
Erase Verify in Progress
I
PPS
V
PP
Leakage Current
1
±10
μA
V
PP
V
CC
I
PP1
V
PP
Read Current, ID
Current
1
90
200
μA
V
PP
> V
CC
or Standby Current
±10
V
PP
V
CC
I
PP2
V
PP
Programming Current
1, 2
8
30
mA
V
PP
= V
PPH
Programming in
Progress
I
PP3
V
PP
Erase Current
1, 2
10
30
mA
V
PP
= V
PPH
I
PP4
V
PP
Program Verify
Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Program Verify in
Progress
I
PP5
V
PP
Erase- Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Erase Verify in Progress
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