參數(shù)資料
型號(hào): 28F020
廠商: Intel Corp.
英文描述: 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲(chǔ)器)
中文描述: 5伏體擦除閃存(5V的整體擦寫閃速存儲(chǔ)器)
文件頁(yè)數(shù): 38/47頁(yè)
文件大?。?/td> 758K
代理商: 28F020
28F010/28F020
E
38
4.14
AC Characteristics
—28F010—Write/Erase/Program Only Operations
(1)
Commercial and Extended Temperature Products
Versions
28F010-90
(2)
28F010-120
(2)
28F010-150
(2)
Symbol
Characteristic
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
WC
Write Cycle Time
90
120
150
ns
t
AVWL
/t
AS
Address Set-Up Time
0
0
0
ns
t
WLAX
/t
AH
Address Hold Time
40
40
40
ns
3
55
t
DVWH
/t
DS
Data Set-Up Time
40
40
40
ns
55
t
WHDX
/t
DH
Data Hold Time
10
10
10
ns
t
WHGL
Write Recovery Time before
Read
6
6
6
μs
t
GHWL
Read Recovery Time before
Write
4
0
0
0
ns
t
ELWL
/t
CS
Chip Enable Set-Up Time
before Write
15
15
15
ns
t
WHEH
/t
CH
Chip Enable Hold Time
0
0
0
ns
t
WLWH
/t
WP
Write Pulse Width
40
60
60
ns
3
55
t
WHWL
/t
WPH
Write Pulse Width High
20
20
20
ns
t
WHWH1
Duration of Programming
Operation
5
10
10
10
μs
t
WHWH2
Duration of Erase Operation
5
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to Chip
Enable Low
4
1
1
1
μs
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations
See AC Input/Output Waveformand AC Testing Load Circuitfor testing characteristics.
Minimum specification for extended temperature product.
Guaranteed by design.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
2.
3.
4.
5.
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