參數(shù)資料
型號(hào): ADSP-BF506BSWZ-4F
廠商: Analog Devices Inc
文件頁數(shù): 20/80頁
文件大?。?/td> 0K
描述: IC DSP 400MHZ 1.4V 120LQFP
視頻文件: Blackfin? BF50x Processor Family
標(biāo)準(zhǔn)包裝: 1
系列: Blackfin®
類型: 定點(diǎn)
接口: CAN,EBI/EMI,I²C,IrDA,PPI,SPI,SPORT,UART/USART
時(shí)鐘速率: 400MHz
非易失內(nèi)存: 閃存(16MB)
芯片上RAM: 68kB
電壓 - 輸入/輸出: 3.30V
電壓 - 核心: 1.29V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 120-LQFP 裸露焊盤
供應(yīng)商設(shè)備封裝: 120-LQFP-EP(14x14)
包裝: 托盤
Rev. A
|
Page 27 of 80
|
July 2011
ADSP-BF504/ADSP-BF504F/ADSP-BF506F
PROCESSOR—ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Min
Typical
Max
Unit
VOH
High Level Output Voltage
VDDEXT = 1.7 V, IOH = –0.5 mA
1.35
V
High Level Output Voltage
VDDEXT = 2.25 V, IOH = –0.5 mA 2.0
V
High Level Output Voltage
VDDEXT = 3.0 V, IOH = –0.5 mA
2.4
V
VOL
Low Level Output Voltage
VDDEXT = 1.7 V/2.25 V/3.0 V,
IOL = 2.0 mA
0.4
V
IIH
High Level Input Current
1
VDDEXT =3.6 V, VIN = 3.6 V
10.0
μA
IIL
Low Level Input Current
VDDEXT =3.6 V, VIN = 0 V
10.0
μA
IIHP
High Level Input Current JTAG2
VDDEXT = 3.6 V, VIN = 3.6 V
75.0
μA
IOZH
Three-State Leakage Current
3
VDDEXT= 3.6 V, VIN = 3.6 V
10.0
μA
IOZHTWI
Three-State Leakage Current
4
VDDEXT =3.0 V, VIN = 5.5 V
10.0
μA
IOZL
Three-State Leakage Current3
VDDEXT= 3.6 V, VIN = 0 V
10.0
μA
CIN
Input Capacitance
5,6
fIN = 1 MHz, TAMBIENT = 25°C,
VIN =2.5 V
58
pF
CINTWI
Input Capacitance4,6
fIN = 1 MHz, TAMBIENT = 25°C,
VIN =2.5 V
10
pF
IDDDEEPSLEEP
7
V
DDINT Current in Deep Sleep Mode
V
DDINT = 1.2 V, fCCLK = 0 MHz,
f
SCLK =0MHz, TJ = 25°C,
ASF = 0.00
1.85
mA
IDDSLEEP
VDDINT Current in Sleep Mode
V
DDINT = 1.2 V, fSCLK = 25 MHz,
T
J = 25°C
2.1
mA
IDD-IDLE
VDDINT Current in Idle
V
DDINT = 1.2 V, fCCLK = 50 MHz,
T
J = 25°C, ASF = 0.42
18
mA
IDD-TYP
VDDINT Current
V
DDINT = 1.40 V, fCCLK = 400 MHz,
T
J = 25°C, ASF = 1.00
104
mA
VDDINT Current
V
DDINT = 1.225 V, fCCLK = 300 MHz,
T
J = 25°C, ASF = 1.00
69
mA
VDDINT Current
V
DDINT = 1.2 V, fCCLK = 200 MHz,
T
J = 25°C, ASF = 1.00
51
mA
IDDHIBERNATE
8
Hibernate State Current
VDDEXT=3.30 V,
VDDFLASH=1.8 V, TJ = 25°C,
CLKIN = 0 MHz (VDDINT = 0 V)
40
μA
IDDSLEEP
9
VDDINIT Current in Sleep Mode
fCCLK = 0 MHz, fSCLK > 0 MHz
(.16 × VDDINT × fSCLK)
mA10
IDDDEEPSLEEP
VDDINT Current in Deep Sleep Mode fCCLK = 0 MHz, fSCLK = 0 MHz
mA
IDDINT
VDDINT Current
fCCLK > 0 MHz, fSCLK ≥ 0 MHz
(Table 19 × ASF) +
(.16 × VDDINT × fSCLK)
mA
IDDFLASH1
Flash Memory Supply Current 1
— Asynchronous Read (5 MHz
NORCLK11)
10
20
mA
Flash Memory Supply Current 1
— Synchronous Read (50 MHz
NORCLK11)
4 Word
18
20
mA
8 Word
20
22
mA
16 Word
25
27
mA
Continuous
28
30
mA
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