參數(shù)資料
型號： GE28F128W30T90
英文描述： EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
中文描述： 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁數(shù)： 19/91頁
文件大小： 994K
代理商： GE28F128W30T90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
19
NOTES:
1. First-cycle command addresses should be the same as the operation’s target address. Examples: the first-
cycle address for the Read Identifier command should be the same as the Identification code address (IA);
the first-cycle address for the Word Program command should be the same as the word address (WA) to be
programmed; the first-cycle address for the Erase/Program Suspend command should be the same as the
address within the block to be suspended; etc.
XX = Any valid address within the device.
IA = Identification code address.
BA = Block Address. Any address within a specific block.
LPA = Lock Protection Address is obtained from the CFI (through the Read Query command). The 1.8 Volt
Intel Wireless Flash memory family’s LPA is at 0080h.
PA = User programmable 4-word protection address.
PnA = Any address within a specific partition.
Table 6.
Bus Cycle Definitions
Operation
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
1
Data
2,3
Oper
Addr
1
Data
2,3
R
Read Array/Reset
≥
1
Write
PnA
FFh
Read
Read
Address
Array
Data
Read Identifier
≥
2
Write
PnA
90h
Read
PBA+IA
IC
Read Query
≥
2
Write
PnA
98h
Read
PBA+QA
QD
Read Status Register
2
Write
PnA
70h
Read
PnA
SRD
Clear Status Register
1
Write
XX
50h
P
a
E
Block Erase
2
Write
BA
20h
Write
BA
D0h
Word Program
2
Write
WA
40h/10h
Write
WA
WD
EFP
>2
Write
WA
30h
Write
WA
D0h
Program/Erase Suspend
1
Write
XX
B0h
Program/Erase Resume
1
Write
XX
D0h
L
Lock Block
2
Write
BA
60h
Write
BA
01h
Unlock Block
2
Write
BA
60h
Write
BA
D0h
Lock-Down Block
2
Write
BA
60h
Write
BA
2Fh
P
Protection Program
2
Write
PA
C0h
Write
PA
PD
Lock Protection Program
2
Write
LPA
C0h
Write
LPA
FFFDh
C
Set Configuration Register
2
Write
CD
60h
Write
CD
03h
C
Set Configuration Register
2
Write
CD
60h
Write
CD
03h
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