參數(shù)資料
型號(hào): GE28F128W30T90
英文描述: EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
中文描述: 的EEPROM | FLASH動(dòng)畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁(yè)數(shù): 50/91頁(yè)
文件大?。?/td> 994K
代理商: GE28F128W30T90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
50
Datasheet
delay. The delay takes place only once, and only if the burst sequence crosses a 16-word boundary.
The WAIT pin informs the system of this delay. For timing diagrams of WAIT functionality, see
these figures:
Figure 22, “Single Synchronous Read-Array Operation Waveform” on page 64
Figure 23, “Synchronous 4-Word Burst Read Operation Waveform” on page 65
Figure 24, “WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform” on
page 66
Table 16. Sequence and Burst Length (Sheet 1 of 2)
Start
Addr.
(Dec)
Burst Addressing Sequence (Decimal)
4-Word Burst
CR[2:0]=001b
8-Word Burst
CR[2:0]=010b
16-Word Burst
1
CR[2:0]=011b
Continuous
Burst
CR[2:0]=111b
Linear
Intel
Linear
Intel
Linear
Intel
Linear
W
0
0-1-2-3
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0-1-2...14-15
0-1-2-3-4...14-15
0-1-2-3-4-5-6-...
1
1-2-3-0
1-0-3-2
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
1-2-3...14-15-0
1-0-3-2-5...15-14
1-2-3-4-5-6-7-...
2
2-3-0-1
2-3-0-1
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
2-3-4...15-0-1
2-3-0-1-6...12-13
2-3-4-5-6-7-8-...
3
3-0-1-2
3-2-1-0
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
3-4-5...15-0-1-2
3-2-1-0-7...13-12
3-4-5-6-7-8-9-...
4
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-
3-
4-5-6...15-0-1-2-
3
4-5-6-7-0...10-11
4-5-6-7-8-9-10...
5
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
5-6-7...15-0-1...4
5-4-7-6-1...11-10
5-6-7-8-9-10-11...
6
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
6-7-8...15-0-1...5
6-7-4-5-2...8-9
6-7-8-9-10-11-12-
...
7
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
7-8-9...15-0-1...6
7-6-5-4-3...9-8
7-8-9-10-11-12-
13...
.
.
.
.
.
.
.
.
14
14-15-0-1...13
14-15-12-13-10...0-
1
14-15-16-17-18-19-
20-...
15
15-0-1-2-3...14
15-14-13-12-11...1-
0
15-16-17-18-19-...
相關(guān)PDF資料
PDF描述
GE28F640W30B70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30B85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GF4435 TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F160B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)