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參數(shù)資料
| 型號： | GE28F128W30T90 |
| 英文描述： | EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料 |
| 文件頁數(shù)： | 35/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F128W30T90 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
35
6.3
Read-While-Write and Read-While-Erase
The 1.8 Volt Intel
Wireless Flash memory with supports flexible multi-partition dual-operation
architecture. By dividing the flash memory into many separate partitions, the device can read from
one partition while programing or erasing in another partition; hence the terms, RWW and RWE.
Both of these features greatly enhance data storage performance.
Figure 9. Block Erase Flowchart
SR[3,1]
must
be cleared before the WSM will allow further
erase attempts.
Only the Clear Status Register command clears SR[5:3,1].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
Start
FULL ERASE STATUS CHECK PROCEDURE
Repeat for subsequent block erasures.
Full status register check can be done after each block erase
or after a sequence of block erasures.
No
Suspend
Erase
1
0
0
0
1
1
1
1
0
Yes
Suspend
Erase
Loop
0
Write 20h
Block Address
Write D0h and
Block Address
Read Status
Register
SR[7] =
Full Erase
Status Check
(if desired)
Block Erase
Complete
Read Status
Register
Block Erase
Successful
SR[1] =
Erase of
Locked Block
Aborted
BLOCK ERASE PROCEDURE
OpBus
Comments
Write
Block
Erase
Setup
Data = 20h
Addr = Block to be erased (BA)
Write
Erase
Confirm
Data = D0h
Addr = Block to be erased (BA)
Read
Read SRD
Toggle CE# or OE# to update SRD
Standby
Check SR[7]
1 = WSM ready
0 = WSM busy
OpBus
Comments
SR[3] =
V
PP
Range
Error
SR[5:4] =
Command
Sequence Error
SR[5] =
Block Erase
Error
Standby
Check SR[3]
1 = V
PP
error
Standby
Check SR[5:4]
Both 1 = Command sequence error
Standby
Check SR[5]
1 = Block erase error
Standby
Check SR[1]
1 = Attempted erase of locked block
Erase aborted
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