- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375996 > GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC PDF資料下載
參數(shù)資料
| 型號(hào)： | GE28F640W30T70 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 19/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30T70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
19
NOTES:
1. First-cycle command addresses should be the same as the operation’s target address. Examples: the first-
cycle address for the Read Identifier command should be the same as the Identification code address (IA);
the first-cycle address for the Word Program command should be the same as the word address (WA) to be
programmed; the first-cycle address for the Erase/Program Suspend command should be the same as the
address within the block to be suspended; etc.
XX = Any valid address within the device.
IA = Identification code address.
BA = Block Address. Any address within a specific block.
LPA = Lock Protection Address is obtained from the CFI (through the Read Query command). The 1.8 Volt
Intel Wireless Flash memory family’s LPA is at 0080h.
PA = User programmable 4-word protection address.
PnA = Any address within a specific partition.
Table 6.
Bus Cycle Definitions
Operation
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
1
Data
2,3
Oper
Addr
1
Data
2,3
R
Read Array/Reset
≥
1
Write
PnA
FFh
Read
Read
Address
Array
Data
Read Identifier
≥
2
Write
PnA
90h
Read
PBA+IA
IC
Read Query
≥
2
Write
PnA
98h
Read
PBA+QA
QD
Read Status Register
2
Write
PnA
70h
Read
PnA
SRD
Clear Status Register
1
Write
XX
50h
P
a
E
Block Erase
2
Write
BA
20h
Write
BA
D0h
Word Program
2
Write
WA
40h/10h
Write
WA
WD
EFP
>2
Write
WA
30h
Write
WA
D0h
Program/Erase Suspend
1
Write
XX
B0h
Program/Erase Resume
1
Write
XX
D0h
L
Lock Block
2
Write
BA
60h
Write
BA
01h
Unlock Block
2
Write
BA
60h
Write
BA
D0h
Lock-Down Block
2
Write
BA
60h
Write
BA
2Fh
P
Protection Program
2
Write
PA
C0h
Write
PA
PD
Lock Protection Program
2
Write
LPA
C0h
Write
LPA
FFFDh
C
Set Configuration Register
2
Write
CD
60h
Write
CD
03h
C
Set Configuration Register
2
Write
CD
60h
Write
CD
03h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
| GF4810 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。