參數(shù)資料
型號(hào)： GE28F640W30T70
英文描述： EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
中文描述： 的EEPROM | FLASH動(dòng)畫(huà)| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料
文件頁(yè)數(shù)： 84/91頁(yè)
文件大?。?/td> 994K
代理商： GE28F640W30T70
B.6
Intel-Specific Extended Query Table
Table 33. Primary Vendor-Specific Extended Query
Offset
(1)
Length
P = 39h
(P+0)h
3
(P+1)h
(P+2)h
(P+3)h
1
(P+4)h
1
(P+5)h
4
(P+6)h
(P+7)h
(P+8)h
Description
Hex
Code Value
--50
--52
--49
--31
--33
--E6
--03
--00
--00
bit 0 = 0
bit 1 = 1
bit 2 = 1
bit 3 = 0
bit 4 = 0
bit 5 = 1
bit 6 = 1
bit 7 = 1
bit 8 = 1
bit 9 = 1
42:
--01
(Optional flash features and commands)
Primary extended query table
Unique ASCII string “PRI“
Add.
39:
3A:
3B:
3C:
3D:
3E:
3F:
40:
41:
"P"
"R"
"I"
"1"
"3"
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 10–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of Optional features follows at
the end of the bit–30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant individual block locking supported
bit 6 Protection bits supported
bit 7 Pagemode read supported
bit 8 Synchronous read supported
bit 9 Simultaneous operations supported
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
(P+9)h
1
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
V
CC
logic supply highest performance program/erase voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
V
PP
optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
bit 0 = 1
43:
44:
bit 0 = 1
bit 1 = 1
45:
Yes
(P+A)h
(P+B)h
2
--03
--00
Yes
Yes
1.8V
(P+C)h
1
--18
(P+D)h
1
46:
--C0
12.0V
相關(guān)PDF資料
PDF描述
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GF4435 TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
GF4450 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO
GF4800 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO
GF4810 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F640W30T85 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BA90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
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