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參數(shù)資料
| 型號： | GE28F640W30T70 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 47/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30T70 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
47
First Access Latency Count Setting to the CR is Code 3.
(
Figure 17, “Data Output with LC Setting at Code 3” on page 47
displays sample
data.)
The formula t
AVQV (ns) +
t
ADD-DELAY
(ns) + t
DATA
(ns) is also known as initial access time.
Figure 17
shows the data output available and valid after four clocks from the assertion of ADV# in
the first clock period with the LC setting at 3.
8.3
WAIT Signal Polarity (CR[10])
If the WT bit is cleared (CR[10]=0), then WAIT is configured to be asserted low. This means that a
0 on the WAIT signal indicates that data is not ready and the data bus contains invalid data.
Conversely, if CR[10] is set, then WAIT is asserted high. In either case, if WAIT is deasserted, then
data is ready and valid. WAIT is asserted during asynchronous page mode reads.
8.4
WAIT Signal Function
The WAIT signal indicates data valid when the device is operating in synchronous mode
(CR[15]=0), and when addressing a partition that is currently in read-array mode. The WAIT signal
is only “deasserted” when data is valid on the bus.
When the device is operating in synchronous non-read-array mode, such as read status, read ID, or
read query, WAIT is set to an “asserted” state as determined by CR[10]. See
Figure 25, “WAIT
Signal in Synchronous Non-Read Array Operation Waveform” on page 67
.
Figure 17. Data Output with LC Setting at Code 3
A
MAX-0
(A)
DQ
15-0
(D/Q)
CLK (C)
CE# (E)
ADV# (V)
R103
Valid
Output
Valid
Output
High Z
t
ADD-DELAY
t
DATA
1nd
0st
2rd
3th
4th
Valid Address
Code 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
| GF4810 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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