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參數(shù)資料
| 型號： | GE28F640W30T70 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 54/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30T70 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
54
Datasheet
9.5
Power Supply Decoupling
When the device is accessed, many internal conditions change. Circuits are enabled to charge
pumps and switch voltages. This internal activity produces transient noise. To minimize the effect
of this transient noise, device decoupling capacitors are required. Transient current magnitudes
depend on the device outputs’ capacitive and inductive loading. Two-line control and proper
decoupling capacitor selection suppresses these transient voltage peaks. Each flash device should
have a 0.1 μF ceramic capacitor connected between each power (VCC, VCCQ, VPP)
,
and ground
(VSS, VSSQ) signal. High-frequency, inherently low-inductance capacitors should be as close as
possible to package signals.
10.0
Thermal and DC Characteristics
10.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended,
and extended exposure beyond the “Operating Conditions” may affect device reliability.
Notice:
This datasheet contains information on products in the design phase of development. The information
here is subject to change without notice. Do not finalize a design with this information.
Table 17. Absolute Maximum Ratings
Parameter
Note
Maximum Rating
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage on Any Pin (except VCC, VCCQ, VPP)
–0.5 V to +2.45 V
VPP Voltage
1,2,3
–0.2 V to +14 V
VCC and VCCQVoltage
1
–0.2 V to +2.45 V
Output Short Circuit Current
4
100 mA
NOTES:
1. All specified voltages are relative to VSS. Minimum DC voltage is –0.5 V on input/output pins and
–0.2 V on VCC and VPP pins. During transitions, this level may undershoot to –2.0 V for periods < 20
ns which, during transitions, may overshoot to V
+2.0 V for periods < 20 ns.
2. Maximum DC voltage on VPP may overshoot to +14.0 V for periods < 20 ns.
3. V
program voltage is normally V
. V
can be 12 V ± 0.6 V for 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks during program/erase.
4. Output shorted for no more than one second. No more than one output shorted at a time.
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相關代理商/技術參數(shù) |
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| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
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