參數(shù)資料
型號： M37641M8-XXXHP
廠商： Mitsubishi Electric Corporation
英文描述： SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
中文描述： 單芯片8位CMOS微機
文件頁數(shù)： 137/149頁
文件大?。?/td> 1997K
代理商： M37641M8-XXXHP
137
7641 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINARY
Notice: This is not a final specification.
change.
Some parametric limits are subject to
Flash Memory Electrical Characteristics (Timing)
AC Electrical Characteristics (Timing)
(Ta = 20 to 70
o
C, V
CC
= 4.5 to 5.25 V,
φ
= 6 MHz unless otherwise noted)
Table 36 Read-only mode
Read cycle time
Address access time
CE access time
OE access time
Output enable time (after CE)
Output floating time (after CE)
Output enable time (after OE)
Output floating time (after OE)
Output floating time (after PR)
Output valid time (after CE, OE, address)
Write recovery time (before read)
RP recovery time
Limits
Typ.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
Parameter
Min.
167
0
0
0
167
10
Max.
83.3
83.3
66.7
20.8
20.8
250
Symbol
Unit
Note :
Timing measurement condition is showed in Figure 118.
t
RC
ta
(AD)
ta
(CE)
ta
(OE)
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
t
OH
t
OEH
t
PS
Limits
Typ.
Parameter
167
83.3
20.8
83.3
20.8
0
0
83.3
41.7
167
10
Symbol
Unit
Note :
The read timing parameter in the command write operation mode is the same as that of the read-only mode.
Typical value is at V
CC
= 5.0 V, Ta = 25
°
C condition.
Write cycle time
Address set up time
Address hold time
Data set up time
CE hold time
WE pulse width
“
H
”
write pulse width
Read recover time (before write)
Program time
Erase all blocks time
RP recovery time
t
WC
t
AS
t
AH
t
DS
t
DH
t
CS
t
CH
t
WP
t
WPH
t
GHWL
t
DAP
t
DAE
t
WHRL
t
PS
Min.
Max.
25
1.5
1000
20
167
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
s
ns
μ
s
Table 37 Read / Write mode (WE control)
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