STATIC ELECTRICAL CHARACTERISTICS LIN PHYSI" />
參數(shù)資料
型號(hào): MM908E622ACDWB
廠商: Freescale Semiconductor
文件頁數(shù): 2/63頁
文件大?。?/td> 0K
描述: IC QUAD HALF BRDG TRPL SW 54SOIC
標(biāo)準(zhǔn)包裝: 26
應(yīng)用: 自動(dòng)鏡像控制
核心處理器: HC08
程序存儲(chǔ)器類型: 閃存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
輸入/輸出數(shù): 12
電源電壓: 9 V ~ 16 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 54-BSSOP(0.295",7.50mm 寬)裸露焊盤
包裝: 管件
供應(yīng)商設(shè)備封裝: 54-SOICW-EP
Analog Integrated Circuit Device Data
10
Freescale Semiconductor
908E622
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN PHYSICAL LAYER
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, IOUT = 1.0 μA
Dominant State, TXD LOW, 500
Ω External Pull-up Resistor
VLIN_REC
VLIN_DOM
VSUP-1
1.4
V
Normal Mode Pull-up Resistor to VSUP
RPU
20
30
47
k
Ω
Stop, Sleep Mode Pull-up Current Source
IPU
—20
μA
Output Current Shutdown Threshold
IBLIM
100
230
280
mA
Output Current Shutdown Timing
IBLS
5.0
40
s
Leakage Current to GND
VSUP Disconnected, VBUS at 18 V
Recessive state, 8.0 V
≤ VSUP ≤ 18 V, 8.0 V ≤ VBUS ≤ 18 V, VBUS ≥ VSUP
GND Disconnected, VGND = VSUP, VBUS at -18 V
IBUS
IBUS-PAS-REC
IBUS-NOGND
0.0
-1.0
1.0
3.0
10
20
1.0
A
mA
LIN Receiver
Receiver Threshold Dominant
Receiver Threshold Recessive
Receiver Threshold Center
Receiver Threshold Hysteresis
VBUS_DOM
VBUS_REC
VBUS_CNT
VBUS_HYS
0.6
0.475
0.5
0.4
0.525
0.175
VSUP
HIGH SIDE OUTPUT HS1
Switch On Resistance
TJ = 25 °C, ILOAD = 1.0 A
RDS(ON)-HS1
–185
225
m
Ω
Over-current Shutdown
IHSOC1
6.0
9.0
A
Over-current Shutdown blanking time(14)
tOCB
–4-8
s
Current to Voltage Ratio(15)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)
CRRATIOHS1
0.84
1.2
1.56
V/A
High Side Switching Frequency(14)
fPWMHS
––
25
kHz
High Side Freewheeling Diode Forward Voltage
TJ = 25 °C, ILOAD = 1.0 A
VHSF
–0.9
V
Leakage Current
ILeakHS
–<0.2
10
A
Notes
14.
This parameter is guaranteed by process monitoring but is not production tested.
15.
This parameter is guaranteed only if correct trimming was applied.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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