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| 型號(hào)： | MM908E622ACDWB |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 35/63頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC QUAD HALF BRDG TRPL SW 54SOIC |
| 標(biāo)準(zhǔn)包裝： | 26 |
| 應(yīng)用： | 自動(dòng)鏡像控制 |
| 核心處理器： | HC08 |
| 程序存儲(chǔ)器類型： | 閃存（16 kB） |
| 控制器系列： | 908E |
| RAM 容量： | 512 x 8 |
| 接口： | SCI，SPI |
| 輸入/輸出數(shù)： | 12 |
| 電源電壓： | 9 V ~ 16 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 54-BSSOP（0.295"，7.50mm 寬）裸露焊盤 |
| 包裝： | 管件 |
| 供應(yīng)商設(shè)備封裝： | 54-SOICW-EP |
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Analog Integrated Circuit Device Data
40
Freescale Semiconductor
908E622
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
High Side Over-voltage / Under-voltage Protection
The outputs are protected against under/ over-voltage
conditions. This protection is done by the low and high
voltage interrupt circuitry. If an over/ under-voltage condition
is detected (LVIF / HVIF), and the VIS Bit is in the High Side
Status Register is cleared, the output is disabled.
The over/ under-voltage status flags are cleared (and the
output reenabled) by writing a logic [1] to the LVIF / HVIF
flags in the Interrupt Flag Register, or by reset. Clearing this
flag has no effect as long as a high or low voltage condition
is present.
HIGH SIDE OVER-TEMPERATURE PROTECTION
The outputs are protected against over-temperature
conditions.
Each power output comprises two different temperature
thresholds.
The first threshold is the high temperature interrupt (HTI).
When the temperature reaches this threshold, the HTI bit in
the interrupt flag register is set. An interrupt will be generated,
When the HTIE bit in the interrupt mask register is set. In
addition, this interrupt can be used to automatically turn off
the power stages (all high sides, on half-bridges, just the high
side FETs). This shutdown can be enabled/disabled by the
HTIS0 Bit.
The high temperature interrupt flag (HTIE) is cleared (and
the outputs reenabled) by writing a logic [1] to the HTIF flag
in the Interrupt Status Register, or by reset. Clearing this flag
has no effect, as long as a high temperature condition is
present.
If the HTIS shutdown is disabled, a second threshold
(HTR) will be used to turn off all power stages (HB (all FETs),
HS, HVDD, EC, H0) in order to protect the device.
HIGH SIDE OVER-CURRENT PROTECTION
The HS outputs are protected against over-current. When
the over-current limit is reached, the output will be
automatically switched off and the over-current flag is set.
Due to the high inrush current of bulbs, a special feature
was implemented to avoid an over-current shutdown during
this inrush current. If a PWM frequency will be supplied to the
PWM input during the switch on of a bulb, the inrush current
will be limited to the over-current shutdown limit. This means,
if the current reaches the over-current shutdown, the high
side will be switched off, but each rising edge on the PWM
input will enable the driver again. The duty cycle supplied by
the MCU has no influence on the switch-on time of the high
side driver.
In order to distinguish between a shutdown due to an
inrush current or a real shutdown, the software checks to see
if the over-current status flag (HSxOCF) in the High Side
Status register is set beyond a certain period of time.
Table 10. High Side Configuration Bits
HSxPWM
HSxON
Mode
00
High side MOSFET off
01
High side MOSFET on, in case of over-
current the over-current flag (HSxOCF) is
set and the high side MOSFET is turned
off
10
In this mode, the PWM duty cycle is either
controlled by the PWM input signal, or
when the over-current shutdown value is
reached by the part itself.
Without reaching the over-current
shutdown, the high side driver is directly
driven from the PWM input signal. If the
Input signal is high, the output is on. If low,
the output is off (PWM control).
If the current reaches the over-current
shutdown value, the high side will be
automatically turned off. With the next
rising edge of the PWM input signal, the
output will turn on again (current
limitation). The HSxOCF bit will be set,
software has to distinguish between an
inrush current, and a real short on the
output.
11
High side MOSFET is switched on and
the inrush current limitation is enabled.
This means the high side will start
automatically with a current limitation
around the over-current shutdown
threshold. (PWM signal must be applied,
see Figure 24)
If the high side enters current limitation
the HSxOCF bit is set, but the output is
not disabled. The software needs to
distinguish between an inrush current and
a real short on the output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MM908E622ACDWBR2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge, Triple High Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror |
| MM908E622ACEK | 功能描述:8位微控制器 -MCU QUAD H-B TRIHS EC GLASS RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MM908E622ACPEK | 功能描述:IC QUAD HALF BRDG TRPL SW 54SOIC RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器 - 特定應(yīng)用 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Aug/2009 標(biāo)準(zhǔn)包裝:250 系列:- 應(yīng)用:網(wǎng)絡(luò)處理器 核心處理器:4Kc 程序存儲(chǔ)器類型:- 控制器系列:- RAM 容量:16K x 8 接口:以太網(wǎng)，UART，USB 輸入/輸出數(shù):- 電源電壓:1.8V, 3.3V 工作溫度:- 安裝類型:表面貼裝 封裝/外殼:208-LQFP 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:PG-LQFP-208 其它名稱:SP000314382 |
| MM908E622ACPEKR2 | 功能描述:8位微控制器 -MCU QUAD H-B, TRIHS, EC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MM908E624 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TRIPLE HIGH-SIDE SWITCH WITH EMBEDDED MCU AND LIN |
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