OPERATIONAL MODES H0EN — H0 Input 2pin Hal" />
參數(shù)資料
型號: MM908E622ACDWB
廠商: Freescale Semiconductor
文件頁數(shù): 31/63頁
文件大小: 0K
描述: IC QUAD HALF BRDG TRPL SW 54SOIC
標(biāo)準(zhǔn)包裝: 26
應(yīng)用: 自動(dòng)鏡像控制
核心處理器: HC08
程序存儲(chǔ)器類型: 閃存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
輸入/輸出數(shù): 12
電源電壓: 9 V ~ 16 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 54-BSSOP(0.295",7.50mm 寬)裸露焊盤
包裝: 管件
供應(yīng)商設(shè)備封裝: 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
37
908E622
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
H0EN — H0 Input 2pin Hall-effect Sensor Enable Bit
This read/write bit enables the 2-pin Hall-effect sensor
sense circuitry. Reset clears the H0EN bit.
1 = Hallport H0 is switched on and sensed
0 = Hallport H0 disabled
H0PD — Hallport Pull-up Disable Bit
This read/write bit disables the H0 pull-up resistor. Reset
clears the H0PD bit.
1 = Hallport pull-up resistor on H0 disabled
0 = Hallport pull-up resistor on H0 enabled
H0MS — H0 Mode Select
These read/write bits select the mode of the H0 input.
Reset clears the H0MS bits.
1 = H0 is 2-pin hall sensor input
0 = H0 is general purpose input
Half-bridge Outputs
Outputs HB1:HB4 provide four low resistive half-bridge
output stages. The half-bridges can be used in H-bridge, high
side or low side configurations.
Reset clears all bits in the H-bridge Output Register
(HBOUT), owing to the fact that all half-bridge outputs are
switched off.
HB1:HB4 output features
Short-circuit (over-current) protection on high side and low
side MOSFETs
Current recopy feature (low side MOSFET)
Over-temperature protection
Over-voltage and under-voltage protection
Active clamp on low side MOSFET
Figure 22. Half-bridge Push-Pull Output Driver
Half-bridge Control
Each output MOSFET can be controlled individually. The
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). The HBx_L and HBx_H
bits form one half-bridge. It is not possible to switch on both
MOSFETs in one half-bridge at the same time. If both bits are
set, the high side MOSFET is in PWM mode.
To avoid both MOSFETs (high side and low side) of one
half-bridge being on at the same time, a break-before-make
circuit exists. Switching the high side MOSFET on is
inhibited, as long as the potential between gate and VSS is
not below a certain threshold. Switching the low side
MOSFET on is blocked as long as the potential between gate
and source of the high side MOSFET did not fall below a
certain threshold.
High Side Driver
Charge Pump
Over-temperature Protection
Over-current Protection
Low Side Driver
Current Recopy
Current Limitation
Active Clamp
Over-current Protection
Control
On/Off
Status
On/Off
Status
PWM
HBx
VSUP
GND
PWM
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