參數(shù)資料
型號(hào): 28F128
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory
中文描述: 3伏特英特爾StrataFlash存儲(chǔ)器
文件頁(yè)數(shù): 46/58頁(yè)
文件大?。?/td> 380K
代理商: 28F128
28F128J3A, 28F640J3A, 28F320J3A
40
Preliminary
5.7
Power Dissipation
When designing portable systems, designers must consider battery power consumption not only
during device operation, but also for data retention during system idle time. Flash memory
s
nonvolatility increases usable battery life because data is retained when system power is removed.
6.0
Electrical Specifications
6.1
Absolute Maximum Ratings
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is
0.5 V on input/output pins and
0.2 V on V
and V
pins. During transitions, this level may undershoot to
2.0 V for periods <20 ns.
Maximum DC voltage on input/output pins, V
CC
, and V
PEN
is V
CC
+0.5 V which, during transitions, may
overshoot to V
+2.0 V for periods <20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Warning:
Stressing the device beyond the
Absolute Maximum Ratings
may cause permanent damage.
These are stress ratings only. Operation beyond the
Operating Conditions
is not recommended
and extended exposure beyond the
Operating Conditions
may affect device reliability.
Parameter
Maximum Rating
Temperature under Bias Expanded
25
°
C to +85
°
C
Storage Temperature
65
°
C to +125
°
C
2.0 V to +5.0 V
(1)
100 mA
(2)
Voltage On Any Pin
Output Short Circuit Current
NOTICE: This datasheet contains preliminary information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before
finalizing a design
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F128J3A 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel StrataFlash Memory
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