參數(shù)資料
型號: 28F128
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory
中文描述: 3伏特英特爾StrataFlash存儲器
文件頁數(shù): 31/58頁
文件大?。?/td> 380K
代理商: 28F128
28F128J3A, 28F640J3A, 28F320J3A
Preliminary
25
4.11.1
Read Configuration
The device will support both asynchronous page mode and standard word/byte reads. No
configuration is required.
Status register and identifier only support standard word/byte single read operations.
Table 18. Read Configuration Register Definition
4.12
Configuration Command
The Status (STS) pin can be configured to different states using the Configuration command. Once
the STS pin has been configured, it remains in that configuration until another configuration
command is issued or RP# is asserted low. Initially, the STS pin defaults to RY/BY# operation
where RY/BY# low indicates that the state machine is busy. RY/BY# high indicates that the state
machine is ready for a new operation or suspended.
Table 19,
Configuration Coding Definitions
on page 26
displays the possible STS configurations.
To reconfigure the Status (STS) pin to other modes, the Configuration command is given followed
by the desired configuration code. The three alternate configurations are all pulse mode for use as a
system interrupt as described below. For these configurations, bit 0 controls Erase Complete
interrupt pulse, and bit 1 controls Program Complete interrupt pulse. Supplying the 00h
configuration code with the Configuration command resets the STS pin to the default RY/BY#
level mode. The possible configurations and their usage are described in
Table 19,
Configuration
Coding Definitions
on page 26
. The Configuration command may only be given when the device
is not busy or suspended. Check SR.7 for device status. An invalid configuration code will result in
both status register bits SR.4 and SR.5 being set to
1.
When configured in one of the pulse
modes, the STS pin pulses low with a typical pulse width of 250 ns.
RM
R
R
R
R
R
R
R
16 (A
16
)
15
14
13
12
11
10
9
R
R
R
R
R
R
R
R
8
7
6
5
4
3
2
1
Notes
RCR.16 = READ MODE (RM)
0 = Standard Word/Byte Reads Enabled (Default)
1 = Page-Mode Reads Enabled
Read mode configuration effects reads from the flash array.
Status register, query, and identifier reads support standard
word/byte read cycles.
RCR.15
1 = RESERVED FOR FUTURE ENHANCEMENTS (R)
These bits are reserved for future use. Set these bits to
0.
相關(guān)PDF資料
PDF描述
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器)
28F1604C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F128J3A 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel StrataFlash Memory
28F128J3A150 制造商: 功能描述: 制造商:INTELC 功能描述: 制造商:undefined 功能描述:
28F128J3A-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F128J3D75 制造商: 功能描述: 制造商:Intel 功能描述:
28F128J3FS-12ET 制造商: 功能描述: 制造商:undefined 功能描述: