參數(shù)資料
型號: 28F128
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory
中文描述: 3伏特英特爾StrataFlash存儲器
文件頁數(shù): 41/58頁
文件大小: 380K
代理商: 28F128
28F128J3A, 28F640J3A, 28F320J3A
Preliminary
35
0606_11b
Figure 12. Set Block Lock-Bit Flowchart
Start
Write 60H,
Block Address
Write 01H,
Block Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
1
0
Command
Set Block Lock-Bit
Setup
Comments
Data = 60H
Addr =Block Address
Read Status Register
Data (See Above)
Voltage Range Error
SR.3 =
1
0
Command Sequence
Error
SR.4,5 =
1
0
Set Lock-Bit Error
SR.4 =
1
0
Set Lock-Bit
Successful
Bus
Operation
Standby
Command
Comments
Check SR.3
1 = Programming Voltage Error
Detect
SR.5, SR.4 and SR.3 are only cleared by the Clear Status Register
command, in cases where multiple lock-bits are set before full status is
checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Write
Set Block Lock-Bit
Confirm
Data = 01H
Addr = Block Address
Standby
Repeat for subsequent lock-bit operations.
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in read
array mode.
Check SR.7
1 = WSM Ready
0 = WSM Busy
Read
Status Register Data
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