參數(shù)資料
型號： ADSP-21489KSWZ-4B
廠商： Analog Devices Inc
文件頁數(shù)： 53/68頁
文件大?。?/td> 0K
描述： IC CCD SIGNAL PROCESSOR 176LQFP
標準包裝： 1
系列： SHARC®
類型： 浮點
接口： EBI/EMI，DAI，I²C，SPI，SPORT，UART/USART
時鐘速率： 400MHz
非易失內(nèi)存： 外部
芯片上RAM： 5Mb
電壓 - 輸入/輸出： 3.30V
電壓 - 核心： 1.10V
工作溫度： 0°C ~ 70°C
安裝類型： 表面貼裝
封裝/外殼： 176-LQFP 裸露焊盤
供應(yīng)商設(shè)備封裝： 176-LQFP-EP（24x24）
包裝： 托盤
Rev. B
|
Page 57 of 68
|
March 2013
Note that the thermal characteristics values provided in
Table 56 and Table 57 are modeled values.
Thermal Diode
The ADSP-2148x processors incorporate thermal diode/s to
monitor the die temperature. The thermal diode of is a
grounded collector, PNP Bipolar Junction Transistor (BJT). The
THD_P pin is connected to the emitter and the THD_M pin is
connected to the base of the transistor. These pins can be used
by an external temperature sensor (such as ADM 1021A or
LM86 or others) to read the die temperature of the chip.
The technique used by the external temperature sensor is to
measure the change in VBE when the thermal diode is operated
at two different currents. This is shown in the following
equation:
where:
n = multiplication factor close to 1, depending on process
variations
k = Boltzmann’s constant
T = temperature (°C)
q = charge of the electron
N = ratio of the two currents
The two currents are usually in the range of 10 micro Amperes
to 300 micro Amperes for the common temperature sensor
chips available.
Table 58 contains the thermal diode specifications using the
transistor model.
Table 56. Thermal Characteristics for 100-Lead LQFP_EP
Parameter
Condition
Typical
Unit
JA
Airflow = 0 m/s
17.8
°C/W
JMA
Airflow = 1 m/s
15.4
°C/W
JMA
Airflow = 2 m/s
14.6
°C/W
JC
2.4
°C/W
JT
Airflow = 0 m/s
0.24
°C/W
JMT
Airflow = 1 m/s
0.37
°C/W
JMT
Airflow = 2 m/s
0.51
°C/W
Table 57. Thermal Characteristics for 176-Lead LQFP_EP
Parameter
Condition
Typical
Unit
JA
Airflow = 0 m/s
16.9
°C/W
JMA
Airflow = 1 m/s
14.6
°C/W
JMA
Airflow = 2 m/s
13.8
°C/W
JC
2.3
°C/W
JT
Airflow = 0 m/s
0.21
°C/W
JMT
Airflow = 1 m/s
0.32
°C/W
JMT
Airflow = 2 m/s
0.41
°C/W
V
BE
n
kT
q
------
In(N)
=
Table 58. Thermal Diode Parameters – Transistor Model1
Symbol
Parameter
Min
Typ
Max
Unit
IFW
2
Forward Bias Current
10
300
μA
IE
Emitter Current
10
300
μA
nQ
3, 4
Transistor Ideality
1.012
1.015
1.017
RT
Series Resistance
0.12
0.2
0.28
Ω
1 See Engineer-to-Engineer Note “Using the On-Chip Thermal Diode on Analog Devices Processors” (EE-346).
2 Analog Devices does not recommend operation of the thermal diode under reverse bias.
3 Specified by design characterization.
4 The ideality factor, nQ, represents the deviation from ideal diode behavior as exemplified by the diode equation: IC = IS × (e qVBE/nqkT –1) where IS = saturation current,
q = electronic charge, VBE = voltage across the diode, k = Boltzmann Constant, and T = absolute temperature (Kelvin).
5 The series resistance (RT) can be used for more accurate readings as needed.
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