參數(shù)資料
型號(hào)： GS4576S09L-25
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： DDR DRAM, PBGA144
封裝： UBGA-144
文件頁數(shù)： 33/64頁
文件大?。?/td> 2691K
代理商： GS4576S09L-25
Preliminary
GS4576S09/18L
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 4/2011
39/64
2011, GSI Technology
Absolute Maximum Ratings
Absolute Maximum Voltage
(All voltages reference to VSS)
Parameter
Min
Max
Unit
I/O Voltage
–0.3
VDDQ + 0.3
V
Voltage on VEXT supply
–0.3
+2.8
V
Voltage on VDD supply relative to VSS
–0.3
+2.1
V
Voltage on VDDQ supply relative to VSS
–0.3
+2.1
V
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Temperature
Parameter
Temperature
Range
Symbol
Min.
Max.
Unit
Notes
Storage Temperature
—
TSTG
–55
+150
C°
1
Reliability junction temperature
Commercial
TJ
—
+110
C°
2
Industrial
—
+110
C°
2
Notes:
1. Max storage case temperature; TSTG is measured in the center of the package.
2. Temperatures greater than 110 C° may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at or above this is not implied. Exposure to the absolute maximum ratings condtions for extended periods may affect reliability of
the part.
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