- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370740 > HY5R288HC -|2.5V|8K|40|Direct RDRAM - 288M PDF資料下載
參數(shù)資料
| 型號(hào)： | HY5R288HC |
| 英文描述： | -|2.5V|8K|40|Direct RDRAM - 288M |
| 中文描述： | - |為2.5V | 8K的| 40 |直接RDRAM的- 288M |
| 文件頁(yè)數(shù)： | 50/64頁(yè) |
| 文件大小： | 4542K |
| 代理商： | HY5R288HC |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)當(dāng)前第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)
50
Rev.0.9/Dec.2000
Direct RDRAM
256/288-Mbit (512Kx16/18x32s) Preliminary
Electrical Characteristics
Table 20: Electrical Characteristics
Symbol
Parameter and Conditions
Min
Max
Unit
Θ
JC
Junction-to-Case thermal resistance
TBD
°
C/Watt
I
REF
V
REF
current @ V
REF,MAX
-10
10
μ
A
I
OH
RSL output high current @ (0
≤
V
OUT
≤
V
DD
)
-10
10
μ
A
I
ALL
RSL I
OL
current @ V
OL
= 0.9V, V
DD,MIN
, T
J,MAXa
30.0
90.0
mA
I
OL
RSL I
OL
current resolution step
-
2.0
mA
r
OUT
Dynamic output impedance
150
-
I
OL,NOM
RSL I
OL
current @ VOL = 1.0V
b,c
26.6
30.6
mA
I
OL_A01,NOM
RSL I
OL
current @ VOL = 0.9V
b,d
30.1
34.1
mA
I
I,CMOS
CMOS input leakage current @ (0
≤
V
I,CMOS
≤
V
CMOS
)
-10.0
10.0
μ
A
V
OL,CMOS
CMOS output voltage @ I
OL,CMOS
= 1.0mA
-
0.3
V
V
OH,CMOS
CMOS output high voltage @ I
OH,CMOS
= -0.25mA
V
CMOS
-0.3
-
V
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
c. This measurement is made in automatic current control mode in a 25
test system with V
TERM
= 1.714V and V
REF
= 1.375V and with the ASYMA
and ASYMB register fields set to 0.
d. . This measurement is made in automatic current control mode in a 25
test system with V
TERM
= 1.714V and V
REF
= 1.375V and with the ASYMA
and ASYMB register fields set to 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5V16CF | 1Mx16|3.3V|4K|H|SDR SDRAM - 16M |
| HY5V16CF-H | x16 SDRAM |
| HY5V16CF-S | x16 SDRAM |
| HY6116-10 | x8 SRAM |
| HY6116-12 | x8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5S2B6DLF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM |
| HY5S2B6DLFP-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM |
| HY5S2B6DLFP-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM |
| HY5S2B6DLF-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM |
| HY5S5B2BLF-6E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M (8Mx32bit) Mobile SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。