參數(shù)資料
型號(hào)： KM48S8030B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2M x 8Bit x 4 Banks Synchronous DRAM(2M x 8位 x 4組同步動(dòng)態(tài)RAM)
中文描述： 200萬(wàn)× 8位× 4銀行同步DRAM（2米× 8位× 4組同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 22/43頁(yè)
文件大?。?/td> 625K
代理商： KM48S8030B
CMOS SDRAM
DEVICE OPERATIONS - III
ELECTRONICS
REV. 3 Feb. '98
*Note :
1. Active power down : one or more banks active state.
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During t
RFC
from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are perfomed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh mode, all inputs expect CKE will be don't cared, and outputs will be in Hi-Z state.
For the time interval of t
RFC
from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (4096 cycles) is recommended.
10. Clock Suspend Exit & Power Down Exit
CLK
CKE
CMD
RD
1) Clock Suspend (=Active Power Down) Exit
tSS
CLK
CKE
CMD
2) Power Down (=Precharge Power Down)
Note 1
Note 5
Internal
CLK
NOP
tSS
Note 2
Internal
CLK
11. Auto Refresh & Self Refresh
CLK
CMD
1) Auto Refresh & Self Refresh
CKE
PRE
AR
CMD
Note 4
tRP
tRFC
ó
ó
ó
ó
CLK
CMD
2) Self Refresh
CKE
PRE
SR
CMD
Note 4
tRP
tRFC
ó
ó
Note 6
Note 3
ó
ACT
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KM48S8030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM
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