參數(shù)資料
型號: KM48S8030B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 8Bit x 4 Banks Synchronous DRAM(2M x 8位 x 4組同步動態(tài)RAM)
中文描述: 200萬× 8位× 4銀行同步DRAM(2米× 8位× 4組同步動態(tài)RAM)的
文件頁數(shù): 26/43頁
文件大?。?/td> 625K
代理商: KM48S8030B
CMOS SDRAM
DEVICE OPERATIONS - III
ELECTRONICS
REV. 3 Feb. '98
FUNCTION TRUTH TABLE (TABLE 2)
Current
State
CS
RAS
CAS
WE
ADDR
ACTION
Note
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
OP Code
X
X
X
X
X
Self
Refresh
INVALID
Exit Self Refresh --> Idle after t
RFC
(ABI)
Exit Self Refresh --> Idle after t
RFC
(ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Power Down --> ABI
Exit Power Down --> ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table 1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clcok Suspend
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
X
X
X
X
X
6
6
7
7
8
8
8
9
9
All
Banks
Idle
*Note :
6. CKE low to high transition is asynchronous.
7. CKE low to high transition is asynchronous if restarts internal clock.
A minimum setup time 1CLK + t
SS
must be satisfied before any command other than exit.
8. Power down and self refresh can be entered only from the both banks idle state.
9. Must be a legal command.
Abbreviations : ABI = All Banks Idle, RA = Row Address
CKE
(n-1)
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
L
L
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
H
L
H
L
CKE
n
All
Banks
Precharge
Power
Down
Any State
other than
Listed
above
相關(guān)PDF資料
PDF描述
KM48V514D 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
KM48V8100B 8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位 CMOS 動態(tài)RAM(帶快速頁模式))
KM48V8000B 8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位 CMOS 動態(tài)RAM(帶快速頁模式))
KM6161000B 64K x16 Bit Low Power CMOS Static RAM(64K x16位低功耗 CMOS 靜態(tài)RAM)
KM6161002A 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM48S8030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM
KM48S8030CT-G/FA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM
KM48S8030D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48V2000B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48V2100B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode