參數(shù)資料
型號： M58MR016C
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 12/51頁
文件大?。?/td> 389K
代理商： M58MR016C
M58MR016C, M58MR016D
12/51
Table 11. Instructions
Note: 1. First cycle command address should be the same as the operation’s target address. The first cycle of the RD, RSR, RSIG or RCFI
instruction is followed by read operations in the bank array or special register. Any number of read cycles can occur after one com-
mand cycle.
2. BKA = Address within the bank, BA = Block Address, EA = Electronic Signature Address, CFIA = Common Flash Interface Address;
WA = Word Address, PA = Protection Register Address, LPA = Lock Protection Register Address, RCA = Read Configuration Reg-
ister Address, PD = Protection Data, CFID = Common Flash Interface Data, ED = Electronic Signature Data, WD = Word Data, LPD
= Lock protection Register Data
3. WA1, WA2, WA3 and WA4 must be consecutive address differing only for address bits A1-A0.
4. Read cycle after CLSR instruction will output the memory array.
Instruction
Cyc. Operation
Address
(1,2)
Data
(3)
Operation
Address
(1,2)
Data
(3)
R
RD
Read Memory
Array
1+
Write
BKA
FFh
Read
(1)
Read
Address
Data
RSR
Read Status
Register
1+
Write
BKA
70h
Read
(1)
BKA
Status
Register
RSIG
Read
Electronic
Signature
1+
Write
EA
90h
Read
(1)
EA
ED
RCFI
Read CFI
1+
Write
CFIA
98h
Read
(1)
CFIA
CFID
CLRS
(5)
Clear Status
Register
1
Write
BKA
50h
P
EE
Block Erase
2
Write
BA
20h
Write
BA
D0h
BE
Bank Erase
2
Write
BKA
80h
Write
BKA
D0h
PG
Program
2
Write
WA
40h or 10h
Write
WA
WD
DPG
Double Word
Program
3
Write
WA1
30h
Write
WA1
WD1
Write
WA2
WD2
TPG
Tetra Word
Program
5
Write
WA1
55h
Write
WA1
WD1
Write
WA2
WD2
Write
WA3
WD3
Write
WA4
WD4
PES
Program
Erase
Suspend
1
Write
BKA
B0h
PER
Program
Erase
Resume
1
Write
BKA
D0h
P
BP
Block Protect
2
Write
BA
60h
Write
BA
01h
BU
Block
Unprotect
2
Write
BA
60h
Write
BA
D0h
BL
Block Lock
2
Write
BA
60h
Write
BA
2Fh
C
PRP
Protection
Register
Program
2
Write
PA
C0h
Write
PA
PD
LPRP
Lock Protec-
tion Register
Program
2
Write
LPA
C0h
Write
LPA
LPD
CR
Write Read
Configuration
Register
2
Write
RCA
60h
Write
RCA
03h
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M58MR016DZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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