參數(shù)資料
型號(hào)： M58MR016C
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 30/51頁(yè)
文件大?。?/td> 389K
代理商： M58MR016C
M58MR016C, M58MR016D
30/51
Table 27. Asynchronous Read AC Characteristics
(T
A
= –40 to 85°C; V
DD
= V
DDQ
= 1.7V to 2.0V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
Symbol
Alt
Parameter
Test Condition
M58MR016
Unit
100
120
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
E = V
IL
, G = V
IL
100
120
ns
t
AVLH
t
AVAVDH
Address valid to Latch
Enable High
G = V
IH
10
10
ns
t
AVQV
t
ACC
Address Valid to Output
Valid (Random)
E = V
IL
, G = V
IL
100
120
ns
t
AVQV1
t
PAGE
Address Valid to Output
Valid (Page)
E = V
IL
, G = V
IL
45
45
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output
Hi-Z
G = V
IL
20
20
ns
t
ELLH
t
ELAVDH
Chip Enable Low to Latch
Enable High
E = V
IL
, G = V
IH
10
10
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output
Valid
G = V
IL
100
120
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
0
0
ns
t
GHQX
t
OH
Output Enable High to
Output Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
20
20
ns
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
E = V
IL
25
35
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
E = V
IL
0
0
ns
t
LHAX
t
AVDHAX
Latch Enable High to
Address Transition
E = V
IL
, G = V
IH
10
10
ns
t
LHGL
Latch Enable High to
Output Enable Low
E = V
IL
10
10
ns
t
LLLH
t
AVDLAVDH
Latch Enable Pulse Width
E = V
IL
, G = V
IH
10
10
ns
t
LLQV
t
AVDLQV
Latch Enable Low to
Output Valid (Random)
E = V
IL
100
120
ns
t
LLQV1
Latch Enable Low to
Output Valid (Page)
E = V
IL
45
45
ns
相關(guān)PDF資料
PDF描述
M58MR032C 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58WR032F-ZBF CAP 560PF 100V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF
M58WR032F-ZBE 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58MR016C120ZC6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58MR016CZC 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016D 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016DZC 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016-ZCT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*