參數(shù)資料
型號： M58MR016C
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 29/51頁
文件大?。?/td> 389K
代理商： M58MR016C
29/51
M58MR016C, M58MR016D
Table 26. DC Characteristics
(T
A
= –40 to 85°C; V
DD
= V
DDQ
= 1.7V to 2.0V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. V
PP
may be connected to 12V power supply for a total of less than 100 hrs.
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±5
μA
I
DD1
Supply Current
(Asynchronous Read Mode)
E = V
IL
, G = V
IH
, f = 6MHz
10
20
mA
Supply Current
(Synchronous Read Mode
Continuous Burst)
E = V
IL
, G = V
IH
, f = 40MHz
20
30
mA
I
DD2
Supply Current
(Power-down)
RP = V
SS
± 0.2V
2
10
μA
I
DD3
Supply Current (Standby)
E = V
DD
± 0.2V
15
50
μA
I
DD4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
I
DD5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
20
40
mA
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
30
50
mA
I
PP1
V
PP
Supply Current (Program
or Erase)
V
PP
= 12V ± 0.6V
5
10
mA
I
PP2
V
PP
Supply Current (Standby
or Read)
V
PP
≤
V
CC
0.2
5
μA
V
PP
= 12V ± 0.6V
100
400
μA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage CMOS
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PP
Supply Voltage
Program, Erase
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
PPH
V
PP
Supply Voltage
Double/Tetra Word Program
11.4
12.6
V
V
PPLK
Program or Erase Lockout
1
V
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參數(shù)描述
M58MR016C120ZC6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58MR016CZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016DZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016-ZCT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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